A single crystal diamond substrate structure and its splicing processing method

Abstract

The invention discloses a single crystal diamond substrate structure and its splicing processing method. Selecting a single crystal diamond substrate block; taking the first growth plane of the single crystal diamond substrate block as the starting position, cutting the single crystal diamond substrate block ; Wherein, the cross-section of the single crystal diamond substrate block is a plane, and the cross-section extends from the first growth surface to the second growth surface opposite to it; with the axis parallel to the first growth surface as the axis, the adjacent single crystal after cutting is reversed For any block in the blocks of the crystalline diamond substrate, the first growth surface of one block and the second growth face of the adjacent block are located on the same continuous plane; after splicing and flipping the adjacent blocks, the continuous plane is used as Growth surface; the present invention cuts the same single crystal diamond substrate block obliquely, and flips the cut block to form a new single crystal diamond substrate structure, which can effectively increase the growth surface of the single crystal diamond substrate block , and the growth defects of diamond can be circumvented by the structure.

Description

technical field [0001] The invention belongs to the technical field of semiconductor device processing, and in particular relates to a single crystal diamond substrate structure and a splicing processing method thereof. Background technique [0002] Diamond has excellent characteristics such as ultra-wide bandgap (5.45eV), high breakdown field strength (20MV / cm), high carrier saturation drift velocity and carrier mobility, and its quality factor of microwave power devices is 4500 times higher than that of GaAs Silicon is 32,400 times higher, and it is expected to overcome the two major technical bottlenecks of "thermal effect" and "avalanche breakdown" of power electronic devices in radar T / R components at this stage. Therefore, it has shown obvious advantages and strong industrial potential as an ultra-wide and tight-band semiconductor material. At present, the size of single crystal diamond synthesized on the market is usually 5-10 mm, or even smaller. Large-sized single...

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Problems solved by technology

[0004] However, this method is only the superposition of multiple small-sized diamond substrates. More importantly, there are differences in the internal structure and quality of multiple diamond substrates, which leads to problems such as cracking of the splicing seam and dislocation of crystal orientation.

In the process of processing, when diamond grinding technology is used to process the adjacent two sides, there is a risk of grinding cracking and chipping, the processing efficiency is low, and there are too many human experience problems, such as the difference in the grinding accuracy of two adjacent samples and the difference in the grinding parallelism cause it cannot be closely arranged, etc.

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