A high-efficiency high-temperature solidification process for silicon carbide seed crystals

A high-temperature solidification and silicon carbide technology, which is applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of ordinary fixing effect and affecting the quality of crystal growth, etc., and achieve good effect, full and efficient use, and good high temperature resistance effect Effect

Active Publication Date: 2022-06-21
FUJIAN NORSTEL MATERIAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the seed crystal fixing method used in this patent for silicon carbide crystal growth is to coat the reverse side of the seed crystal growth surface, and use the seed crystal holder to fix the seed crystal. The fixing effect is average and directly affects the crystal growth quality.

Method used

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  • A high-efficiency high-temperature solidification process for silicon carbide seed crystals
  • A high-efficiency high-temperature solidification process for silicon carbide seed crystals

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] A high-efficiency high-temperature solidification process for silicon carbide seed crystals, using a crucible fixture having a lid, a crucible cover, a crucible with a thickness of 10 mm, a chassis, a chassis temperature measuring hole with a diameter of 5 mm, and a vent hole for high-temperature solidification of silicon carbide seed crystals ;Each two adjacent air holes with a diameter of 10mm form an inverted zigzag shape, the central axes of the two holes are respectively inclined at 5° to the horizontal line, and the central axes of the inner and outer holes are separated by 1 / 4 of the diameter of the air holes, and they overlap in the center of the crucible wall. The inner hole is at a high position; the crucible fixture is made of graphite material; the temperature measurement hole of the chassis adopts an infrared high temperature thermometer to measure and control temperature; including the following steps:

[0043] Step S1, use carbon glue to stick the silicon ...

Embodiment 2

[0052] A process for high-efficiency high-temperature solidification of silicon carbide seed crystals, using a crucible fixture with a lid, a crucible cover, a crucible with a thickness of 30mm, a chassis, a temperature measuring hole with a diameter of 20mm, and a vent hole for high-temperature solidification of silicon carbide seed crystals ;Each two adjacent air holes with a diameter of 30mm form an inverted zigzag shape, the central axes of the two holes are respectively inclined at 15° to the horizontal line, and the central axes of the inner and outer holes are separated by 1 / 4 of the diameter of the air holes, which overlap in the center of the crucible wall. The inner hole is at a high position; the crucible fixture is made of graphite material; the temperature measurement hole of the chassis adopts an infrared high temperature thermometer to measure and control temperature; including the following steps:

[0053] Step S1, use carbon glue to stick the silicon carbide se...

Embodiment 3

[0062] A process for high-efficiency high-temperature solidification of silicon carbide seed crystals, using a crucible fixture with a lid, a crucible cover, a crucible with a thickness of 20mm, a chassis, a chassis temperature measuring hole with a diameter of 12.5mm, and a vent hole for high temperature of the silicon carbide seed crystal. Solidification; every two adjacent air holes with a diameter of 20mm in the ventilation holes form an inverted Z shape, the central axes of the two holes are respectively inclined at 10° to the horizontal line, and the central axes of the inner and outer holes are separated by 1 / 4 of the diameter of the air holes, which meet at the center of the crucible wall. The overlap is connected and the inner hole is at a high position; the crucible fixture is made of graphite material; the temperature measuring hole of the chassis adopts an infrared high temperature thermometer to measure and control temperature; including the following steps:

[006...

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Abstract

The invention discloses a process for high-efficiency high-temperature solidification of silicon carbide seed crystals. The high-temperature solidification of silicon carbide seed crystals is carried out by using a crucible fixture with a cover, a crucible cover, a crucible, a chassis, a temperature measuring hole on the chassis, and a vent hole; Every two adjacent air holes form an inverted Z shape, the central axes of the two holes are respectively inclined at 5° to 15° from the horizontal line, and they meet and conduct at the center of the crucible wall; it includes the following steps: use a carbon-rich adhesive to seal the silicon carbide seed crystal Paste it on the crucible cover, stack the crucible and the crucible cover with the seed crystal attached from the chassis in turn, and cover the cover; then put the crucible fixture into the high-temperature furnace, vacuum the crucible fixture and put it into the crucible fixture Filled with argon, the crucible fixture is heated by a water-cooled induction coil or a resistor, and the carbon glue is graphitized to complete the high-efficiency high-temperature solidification of the silicon carbide seed crystal. The high-efficiency high-temperature solidification process of the silicon carbide seed crystal of the present invention makes the seed crystal fit well, solidify completely, have few defects, and have high quality of subsequent crystal growth.

Description

technical field [0001] The invention relates to the technical field of single crystal growth, in particular to a process for high-efficiency high-temperature solidification of silicon carbide seed crystals. Background technique [0002] Silicon carbide single crystal material is a third-generation semiconductor material that can not only meet the ideal substrate material for manufacturing high-brightness gallium nitride light-emitting and laser diodes, but also meet the requirements for manufacturing semiconductor integrated circuits and devices. Silicon carbide single crystal material has the characteristics of wide band gap, high thermal conductivity, high breakdown electric field, high radiation resistance, etc. It has a wide range of applications in important fields such as drilling, machining and automotive electronics. [0003] At present, the main growth method of SiC single crystal growth is physical vapor deposition (PVT), which has been proved to be the most matur...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/36C30B23/00
CPCC30B23/00C30B29/36
Inventor 陈华荣张洁廖弘基蔡如腾
Owner FUJIAN NORSTEL MATERIAL TECH CO LTD
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