A method for assisted single crystal diamond growth by a heteroepitaxial guard ring

A single crystal diamond and heteroepitaxy technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of the decline of crystal quality, the influence of single crystal diamond growth, the growth of diamond polycrystals, etc., to protect the growth , avoid growth defects, cost reduction effect

Active Publication Date: 2022-08-05
XI AN JIAOTONG UNIV
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Problems solved by technology

But this will also cause diamond polycrystals to grow on the metal
The growth mode and growth rate of polycrystal are different from those of single crystal, which will cause polycrystal to spread to single crystal and the surface of polycrystal will be higher than the surface of single crystal, which will affect the growth of single crystal diamond grown by CVD and reduce the quality of crystal, such as Figure 5 shown
Therefore, CVD homoepitaxially grown diamond cannot be grown epitaxially for a long time, which limits the application of single crystal diamond

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  • A method for assisted single crystal diamond growth by a heteroepitaxial guard ring
  • A method for assisted single crystal diamond growth by a heteroepitaxial guard ring
  • A method for assisted single crystal diamond growth by a heteroepitaxial guard ring

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Embodiment Construction

[0027] The following is combined with the attachment and the specific embodiments to explain the present invention in detail.

[0028] Examples of the present invention disclose a kind of homogeneous extension growth auxiliary ring, which is used to set on the periphery of the single crystal diamond substrate for a week, which is a heterogeneous extension structure, such as figure 1 and 2 It includes: non -diamond substrates distributed from bottom to top 10, heterogeneous extension nuclear buffer layer 11, and single crystal diamond nuclear layer 12; The crystal of the single crystal diamond surface is consistent. Heterogeneous extension nuclear buffer 11 is IR, PT or RU. There is a gap between growth auxiliary 20 and single crystal diamond substrate 21 periphery, less than 10mm.

[0029] The above non -diamond substrate 10 uses single crystal materials, which are Si and SIO 2 , SRTIO 3 , MGO or AL 2 O 3 Essence

[0030] The auxiliary ring is a rectangular frame or a square frame...

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Abstract

The invention discloses an adaptive synergistic epitaxial growth single crystal diamond auxiliary ring, which is arranged around the periphery of a single crystal diamond substrate and is a heteroepitaxial structure, comprising: a non-diamond substrate distributed layer by layer from bottom to top, The heteroepitaxial nucleation buffer layer and the single crystal diamond nucleation layer; the crystal orientation of the single crystal diamond nucleation layer is consistent with the crystal orientation of the single crystal diamond surface to be grown. The synergistic growth of the diamond auxiliary ring and the homoepitaxial single crystal diamond is used to improve the growth quality of the homoepitaxial single crystal diamond.

Description

【Technical Field】 [0001] The present invention is a single crystal diamond technology field, and especially involves a method of protecting the growth of single crystal diamonds through heterogeneous extension. 【Background technique】 [0002] Single crystal diamond has a large forbidden bandwidth, large breakdown field, high thermal guidance, high load migration rate, low dielectric constant and good mechanical properties, which makes the single crystal diamond ideal ideal. Semiconductor materials, also known as the ultimate semiconductor material. High -quality monocrystalline diamonds are mainly prepared by the martial lattice extension of the monocrystalline diamond substrate. However, during the process of homogeneous extension of diamonds, plasma enrichment of the edge of the lining border will appear, which will cause uniform temperature, affect the quality of the crystal, and even produce polycrystalline. The traditional method is to increase metal protection bars around t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/04C30B25/18C30B25/20
CPCC30B29/04C30B25/183C30B25/20
Inventor 魏强王宏兴陈根强张晓凡宋志强王若铮
Owner XI AN JIAOTONG UNIV
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