Preparation method for surface-enhanced Raman spectrum active substrate
A technology of surface-enhanced Raman and active substrates, which is applied in the process of producing decorative surface effects, manufacturing microstructure devices, decorative arts, etc., can solve the problems of signal strength and uniformity, and achieve high strength and high uniformity effect
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[0033] The technical solutions of the present invention will be further described below in conjunction with the embodiments.
[0034] 1) According to the steps of acetone, ethanol, and three times of water, ultrasonically clean a 1cm×1cm silicon wafer, wash each solution for 15 minutes, and then use a mixed solution of ammonia water:hydrogen peroxide:three water ratios of 1:1:6 to heat and soak at 70°C. Silicon wafer 30min. Take out the silicon wafer and ultrasonicate it with water three times for 15 minutes, then dry it with nitrogen gas, and treat it with ozone plasma for 10 minutes for later use.
[0035] 2) Almost fill the 50mL beaker with water, then add 6 μl of 2% sodium lauryl sulfate solution dropwise, and let stand.
[0036] 3) Dilute 0.46 μm polystyrene microbeads purchased from sigma with ethanol at a ratio of 1:1, then drop 5 μl of the diluted solution onto the silicon wafer in step 1), and slowly immerse the silicon wafer into the silicon wafer prepared in step 2...
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