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Thermal field gradient improvement device for producing similar monocrystalline silicon ingots by casting method

A technology of single crystal silicon ingot and casting method, which is applied to the production of thermal field devices and materials similar to single crystal silicon ingots by casting method, and the field of silicon ingot thermal field devices and materials, can solve the high cost of single crystal production and the melting of single crystal seed crystals. and other problems, to achieve the effect of reducing the height of the seed crystal, reducing the production cost, improving the chemical material and the growth isotherm curve

Inactive Publication Date: 2011-12-21
ANYANG PHOENIX PHOTOVOLTAIC TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to provide a device for improving the thermal field gradient similar to monocrystalline silicon ingots produced by casting method. Using this device in a GT furnace or an ingot furnace with four sides and top heaters can significantly improve the chemical material and growth isothermal curve; and then It can solve the similar single crystal seed melting problem and solve the high cost problem similar to single crystal production

Method used

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  • Thermal field gradient improvement device for producing similar monocrystalline silicon ingots by casting method
  • Thermal field gradient improvement device for producing similar monocrystalline silicon ingots by casting method
  • Thermal field gradient improvement device for producing similar monocrystalline silicon ingots by casting method

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Such as figure 2 As shown, the heat conduction block 1 is placed under the crucible bottom guard plate 2 (the bottom guard plate is generally made of graphite material), and the crucible bottom guard plate 2 is placed on the crucible 5 (generally a ceramic crucible); the four sides of the crucible 5 are set There are crucible side guards 3 (the side guards are generally made of graphite); a side heater 4 is arranged above the crucible 5 (the height of the crucible 5 is generally 400mm to 600mm, and can be increased if necessary). Top heater 6 is arranged on the top; Heat insulation cage 7 is arranged around side heater 4 and top heater 6, wherein the heat insulation cage 7 below is fixed, and the heat insulation cage 7 of surroundings is integrated above and can be promoted.

[0035] The surrounding insulation layer 9 (for the sake of clarity in the illustration, only one side of the insulation layer 9 is drawn) is arranged on the outside of the crucible side guard pla...

Embodiment 2

[0042] Such as image 3 As shown, the heat conduction block 1 is placed under the crucible bottom guard plate 2 (the bottom guard plate is generally made of graphite material), and the crucible bottom guard plate 2 is placed on the crucible 5 (generally a ceramic crucible); the side of the crucible 5 is provided with a crucible Side guards 3 (the side guards are generally made of graphite); side heaters 4 are arranged above the crucible 5 (the height of the crucible is generally 400mm to 600mm, which can be increased if necessary), and the top of the crucible 5 is provided with Top heater 6; Side heater 4 and top heater 6 are provided with heat insulation cage 7 around, and wherein the heat insulation cage 7 below is fixed, and the heat insulation cage 7 of all around is integrated above, can promote.

[0043] The surrounding insulation layer 9 (only one side of the insulation layer 9 is drawn for the sake of clarity in the illustration) is arranged outside the crucible side g...

Embodiment 3

[0046] Such as Figure 4 As shown, the heat conduction block 1 is placed under the crucible bottom guard plate 2 (the bottom guard plate is generally made of graphite material), and the crucible 5 (usually a ceramic crucible) is placed on the crucible bottom guard plate 2 (the side guard plate is generally made of graphite material). ); the side of the crucible 5 is provided with a crucible side guard plate 3; a side heater 4 is provided above the crucible 5 (the general height of the crucible is 400mm to 600mm, which can be increased if necessary), and a side heater 4 is provided above the crucible 5. Top heater 6; Side heater 4 and top heater 6 are provided with heat insulation cage 7 around, and wherein the heat insulation cage 7 below is fixed, and the heat insulation cage 7 of all around is integrated above, can promote.

[0047] The surrounding insulation layer 9 (only one side of the insulation layer 9 is drawn for the sake of clarity in the illustration) is arranged ou...

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Abstract

The invention discloses a device for improving the thermal field gradient of similar monocrystalline silicon ingots produced by a casting method, which relates to a thermal field device and materials for a silicon ingot. Or outside the crucible, there are 4 insulation layers. The insulation layer is set at the following position or combination of positions: the insulation layer is set at the following position or combination of positions: fixed on the crucible guard plate, or fixed between the crucible and the guard plate, or fixed on the heat insulation cage , or fixed on the heater, or fixed on the heat conduction block. The setting height of the insulation layer is 1-650mm. The thickness of the insulation layer is 0.01-100mm. The beneficial effects of the present invention are: through the control of the method, the chemical material and the growth isothermal curve can be significantly improved; furthermore, the crystal seed can be solidified on the bottom of the furnace without melting or floating, and at the same time, the height of the crystal seed can be further reduced and the cost can be reduced. Through this method, the seed crystal can be controlled below 20mm.

Description

technical field [0001] The invention relates to the technical field of crystal growth, and further relates to a silicon ingot thermal field device and material, in particular to a similar monocrystalline silicon ingot thermal field device and material produced by a casting method. Background technique [0002] The methods of producing silicon ingots include: CZ method to produce monocrystalline silicon ingots, ingot casting method to produce polycrystalline silicon ingots, FZ method to produce monocrystalline silicon ingots, EFG to produce silicon ribbons and other methods. Due to cost issues, currently solar cells mainly use CZ method single crystal silicon wafers and casting method polycrystalline silicon wafers. The manufacturing cost of CZ monocrystalline silicon is 4 to 5 times that of ingot polysilicon, and the energy consumption is 5 to 7 times higher, resulting in less and less market share of CZ monocrystalline silicon. However, due to the production of polycrystal...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B11/00
Inventor 石坚熊涛涛
Owner ANYANG PHOENIX PHOTOVOLTAIC TECH
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