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Heater improvement apparatus in ingot furnace producing quasi-single crystal silicon with casting method

A heater and casting method technology, which is applied to the heater heating device in the ingot furnace, and the field of the heater improvement device in the furnace similar to the single crystal silicon ingot produced by the casting method, can solve the problems of high cost, melting of the single crystal seed crystal, etc. The effect of reducing production costs and reducing the height of seed crystals

Inactive Publication Date: 2013-09-25
ANYANG PHOENIX PHOTOVOLTAIC TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The object of the present invention is to provide a kind of casting method to produce similar monocrystalline silicon ingot furnace inner heater improvement device, adopt this method, grow similar single crystal (quasi-single crystal) process in the ingot furnace of GT or four sides and top surface heater In the process, it can solve the problem of similar single crystal seed melting, and solve the problem of high cost similar to single crystal production

Method used

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  • Heater improvement apparatus in ingot furnace producing quasi-single crystal silicon with casting method
  • Heater improvement apparatus in ingot furnace producing quasi-single crystal silicon with casting method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Such as figure 1 , 2 As shown, the heat conduction block 1 is placed at the bottom of the graphite bottom guard plate 2, and the ceramic crucible 5 is placed on the graphite bottom guard plate 2; the side of the ceramic crucible 5 is provided with a graphite guard plate 3; The heater 4 is provided with a top heater 6 above the ceramic crucible 5; a thermal insulation cage 7 is provided around the side heater 4 and the top heater 6; the simulated isothermal curve 8 formed is as shown in the figure.

[0022] figure 1 The position of the side heater 4 is: the distance from the upper edge of the side heater 4 to the top heater 6 is 15-30 cm.

[0023] figure 2 and figure 1 The difference is in the side heater 4 boost.

[0024] The side heater 4 moves upwards by 5-10mm on the existing position. Such as 10 mm.

[0025] The single-sided monolithic resistance of side heater 4 is adjusted from 0.03Ω to 0.04~0.05Ω. Such as 0.04Ω.

Embodiment 2

[0027] Such as figure 1 , 2 As shown, the heat conduction block 1 is placed at the bottom of the graphite bottom guard plate 2, and the ceramic crucible 5 is placed on the graphite bottom guard plate 2; the side of the ceramic crucible 5 is provided with a graphite guard plate 3; The heater 4 is provided with a top heater 6 above the ceramic crucible 5; a thermal insulation cage 7 is provided around the side heater 4 and the top heater 6; the simulated isothermal curve 8 formed is as shown in the figure.

[0028] figure 1 The position of the side heater 4 is: the distance from the upper edge of the side heater 4 to the top heater 6 is 15-30 cm.

[0029] figure 2 and figure 1 The difference is in the side heater 4 boost.

[0030] The side heater 4 moves up 140~150mm on the existing position. Such as 150mm.

[0031] The single-sided monolithic resistance of side heater 4 is adjusted from 0.03Ω to 0.07~0.08Ω. Such as 0.08Ω.

Embodiment 3

[0033] Such as figure 1 , 2 As shown, the heat conduction block 1 is placed at the bottom of the graphite bottom guard plate 2, and the ceramic crucible 5 is placed on the graphite bottom guard plate 2; the side of the ceramic crucible 5 is provided with a graphite guard plate 3; The heater 4 is provided with a top heater 6 above the ceramic crucible 5; a thermal insulation cage 7 is provided around the side heater 4 and the top heater 6; the simulated isothermal curve 8 formed is as shown in the figure.

[0034] figure 1 The position of the side heater 4 is: the distance from the upper edge of the side heater 4 to the top heater 6 is 15-30 cm.

[0035] figure 2 and figure 1 The difference is in the side heater 4 boost.

[0036] Side heater 4 moves up 80mm on existing position.

[0037] The single-sided monolithic resistance of the side heater 4 is adjusted from 0.03Ω to 0.05Ω.

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Abstract

The invention discloses a heater improvement apparatus in an ingot furnace producing quasi-single crystal silicon with a casting method, and relates to a heater heating device in an ingot furnace. A technical scheme of the invention is as follows: in a GT ingot furnace or an ingot furnace with top heaters at four sides, heater resistance is turned up, and the heater is moved upward, wherein the heater resistance is adjusted from 0.03 ohm to 0.04-0.08 ohm, and the heater is moved upward for 5-150 mm from a present position. According to a method of the technical scheme, seed crystal is solidified at a furnace bottom without fusing or floating, simultaneously seed crystal height can be decreased further. Through the method, the seed crystal height is controlled to a value of less than 20 mm. When the seed crystal height is decreased, production cost is effectively reduced.

Description

technical field [0001] The invention relates to the field of crystal growth, and further relates to a heating device for a heater in an ingot furnace, in particular to an improved device for a heater in a furnace similar to a single crystal silicon ingot produced by a casting method. Background technique [0002] The methods of producing silicon ingots include: CZ method to produce monocrystalline silicon ingots, ingot casting method to produce polycrystalline silicon ingots, FZ method to produce monocrystalline silicon ingots, EFG to produce silicon ribbons and other methods. Due to cost issues, currently solar cells mainly use CZ method single crystal silicon wafers and casting method polycrystalline silicon wafers. The manufacturing cost of CZ monocrystalline silicon is 4 to 5 times that of ingot polysilicon, and the energy consumption is 5 to 7 times higher, resulting in less and less market share of CZ monocrystalline silicon. However, due to the production of polycrys...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B11/00C30B29/06
Inventor 石坚熊涛涛
Owner ANYANG PHOENIX PHOTOVOLTAIC TECH
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