Gradient improving device of thermal field for producing pseudo single crystal silicon ingot by casting method

Abstract

The invention discloses a gradient improving device of a thermal field for producing a pseudo single crystal silicon ingot by a casting method, and relates to a silicon ingot thermal field device and a material. Thermal insulation layers are arranged on four sides in a GT ingot furnace or ingot furnaces of heaters on the four sides and the top and outside a crucible protecting plate or a crucible. Further, the thermal insulation layers are arranged at one, two, three or four of the positions, i.e., the thermal insulation layers are fixed on the crucible protecting plate, between the crucible and the protecting plate, on a heat insulating cage, on the heaters or on a heat conducting block. The arrangement height of the thermal insulation layers is 1-650 mm. The thickness of the thermal insulation layers is 0.01-100 mm. The gradient improving device has the beneficial effects that the material smelting and growth isothermal curve can be obviously improved by adopting the device in the GT furnace or the ingot furnaces of the heaters on the four sides and the top; further, crystal seeds can be cured at the bottom of the furnace without being smelted or floating; meanwhile, the crystal seed height can be further reduced; and by the method, the crystal seeds can be controlled to be below 20 mm. The production cost can be effectively reduced through reduction in height of the crystal seeds.

Description

technical field [0001] The invention relates to the technical field of crystal growth, and further relates to a silicon ingot thermal field device and material, in particular to a similar monocrystalline silicon ingot thermal field device and material produced by a casting method. Background technique [0002] The methods of producing silicon ingots include: CZ method to produce monocrystalline silicon ingots, ingot casting method to produce polycrystalline silicon ingots, FZ method to produce monocrystalline silicon ingots, EFG to produce silicon ribbons and other methods. Due to cost issues, currently solar cells mainly use CZ method single crystal silicon wafers and casting method polycrystalline silicon wafers. The manufacturing cost of CZ monocrystalline silicon is 4 to 5 times that of ingot polysilicon, and the energy consumption is 5 to 7 times higher, resulting in less and less market share of CZ monocrystalline silicon. However, due to the production of polycrystal...

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to provide a device for improving the thermal field gradient similar to monocrystalline silicon ingots produced by casting method. Using this device in a GT furnace or an ingot furnace with four sides and top heaters can significantly improve the chemical material and growth isothermal curve; and then It can solve the similar single crystal seed melting problem and solve the high cost problem similar to single crystal production

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