High-temperature pressure sensor

Abstract

The invention specifically discloses a high-temperature pressure sensor. The problem that a conventional pressure sensor is invalidly isolated in a high-temperature environment and cannot work normally due to an unreasonable structure is solved. The high-temperature pressure sensor comprises a columnar shell with an open upper end; the upper end of the shell is provided with an upper end cover with a center hole; the lower bottom surface of the upper end cover is provided with a step-shaped upper heat-insulating ring; the upper part of the step-shaped upper heat-insulating ring penetrates into the center hole of the upper end cover; the lower surface of the upper heat-insulating ring is provided with a heat sinking body; a gap is maintained between the heat sinking body and the inner sidewall of the shell; further, the center of the heat sinking body is provided with a through hole; a pressure guiding pipe communicated with the through hole of the heat sinking body and further penetrating through the upper heat-insulating ring is fixed at the upper end of the heat sinking body; a lower heat-insulating ring which is in contact with the heat sinking body and the inner wall of the lower end of the shell is arranged between the heat sinking body and the inner wall of the lower end of the shell; the inner wall of the lower end of the shell is provided with a groove; and a pressuresensor main body communicated with the through hole of the heat sinking body is placed in the groove. The high-temperature pressure sensor has the advantages of reasonable and reliable structure, andalso can work for a long time while the purpose that the pressure sensor can carry out pressure measurement in the high-temperature environment is met.

Description

technical field [0001] The invention relates to a pressure sensor, in particular to a high-temperature pressure sensor. Background technique [0002] The pressure sensors widely used at present are mostly piezoresistive pressure sensors, that is, diffused silicon pressure sensors. The core part of its structure is an N-type circular silicon diaphragm cut along a certain crystal direction. On the monocrystalline silicon diaphragm, a silicon piezoresistive chip is made, and the periphery of the chip is fixed and packaged in the casing, and the electrode leads are drawn out, and the measured pressure is directly felt through the silicon diaphragm. One side of the silicon diaphragm is a high-pressure chamber connected to the measured pressure, and the other side is a low-pressure chamber connected to the atmosphere. Under the action of the measured pressure P, the diaphragm produces stress and strain. Because the diffused silicon piezoresistive pressure sensor relies on the PN...

AI Technical Summary

Problems solved by technology

[0003] The present invention provides a high-temperature pressure sensor that can work in a high-temperature airflow environment in order to solve the problem that the existing pressure sensor cannot work normally due to its unreasonable structure and isolation failure in a high-temperature environment

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