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Method for preparing diamond

A diamond and equipment technology, applied in the field of diamond preparation with atomic layer deposition equipment, can solve problems such as low dependence and high impurity content

Active Publication Date: 2013-06-12
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology

The CVD method activates raw materials by means of combustion, plasma, or hot wire, etc., so that the raw materials are decomposed and self-deposited to prepare; this method has the advantage of low dependence on temperature and pressure, and a wide range of sources. The impurity content of the film made by the PVD method is less, but still contains a higher amount of impurities

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  • Method for preparing diamond
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Embodiment Construction

[0027] The technical solution of the present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.

[0028] The present embodiment provides a kind of preparation method of diamond, specifically comprises the following steps:

[0029] Step 101, treating the surface of the silicon (111) substrate with a standard solution and hydrofluoric acid to form a silicon-hydrogen bond on the surface of the silicon substrate, such as figure 1 As shown, wherein, the standard solution refers to: No. 1 liquid, concentrated sulfuric acid: hydrogen peroxide = 4: 1; No. 2 liquid, ammonia water: pure water: hydrogen peroxide = 1: 5: 1; No. 3 liquid, hydrochloric acid: hydrogen peroxide: pure water =1:1:6;

[0030] Step 102, evaporating or sputtering a layer of metallic sodium on the surface of the silicon substrate, such as figure 2 As shown, and place the silicon substrate in the reaction chamber of the atomic layer deposition equipment;

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Abstract

The invention relates to the technical field of diamond preparation, in particular to a method for preparing diamond by using atomic layer deposition equipment. The method specifically comprises the following steps: putting a silicon substrate in a reaction chamber of the atomic layer deposition equipment; transporting a carbon-containing precursor to the reaction chamber of the atomic layer deposition equipment by way of carrier gas transport; and accumulating carbon atoms in the carbon-containing precursor on the silicon substrate through plasma discharge to spontaneously form a diamond structure. The method has the following beneficial effects that: the diamond can be prepared under a low-temperature and low-pressure condition by utilizing the atomic layer deposition equipment and common carbon sources; and the impurity content and structural integrity of the diamond can be controlled.

Description

technical field [0001] The invention relates to the technical field of diamond preparation, in particular to a method for preparing diamond by atomic layer deposition equipment. Background technique [0002] Diamond, commonly known as diamond, is an allotrope of graphite, which is one of the hardest substances in nature. It has the characteristics of superhardness, wear resistance and fast heat conduction. In addition, due to the high refractive index, diamonds shine brightly under the light, making them the favorite gemstones for women. In industrial production, diamond is mainly used to manufacture drill bits and grinding tools. [0003] At present, the methods for preparing diamond mainly include high-temperature and high-pressure conversion of graphite, PVD, and CVD methods. The high temperature and high pressure method consumes more energy, and the quality of the film prepared by cutting is not good. The PVD method obtains diamond by sputtering a graphite target, bu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/27C23C16/455C23C16/50
Inventor 饶志鹏万军夏洋李超波刘键陈波黄成强石莎莉李勇滔
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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