Continuous high temperature chemical vapor deposition (HTCVD) method silicon carbide crystal growing device

Abstract

The invention relates to a continuous high temperature chemical vapor deposition (HTCVD) method silicon carbide crystal growing device. The device comprises a main chamber, a moveable tray, a fixed tray, a first auxiliary chamber and a second auxiliary chamber, wherein the main chamber is a hollow cylinder and used for providing a vacuum environment for crystal growth; a tail gas pipeline radially passes through the main chamber; a source gas pipeline is communicated with the lower part of the tail pipeline; the moveable tray is positioned in the main chamber and above the source gas pipeline; the fixed tray is positioned in the main chamber and above the moveable tray; the first auxiliary chamber is used for providing a vacuum buffer environment and provides a sample to the main chamber under the environment; the first auxiliary chamber is positioned on one side of the main chamber and is communicated with the main chamber; a first gate is arranged between the main chamber and the first auxiliary chamber; a second auxiliary chamber is used for providing a vacuum buffer environment and taking out the sample from the main chamber under the environment; the second auxiliary chamber is arranged on the other side of the main chamber and is communicated with the main chamber; a second gate is arranged between the main chamber and the second auxiliary chamber; and the first auxiliary chamber and the second auxiliary chamber are isolated from the main chamber respectively through the first gate and the second gate.

Description

technical field [0001] The present invention relates to the field of semiconductor technology, in particular to a continuous high temperature chemical vapor deposition (High Temperature Chemical Vapor Deposition, HTCVD) silicon carbide crystal growth device or a halide chemical vapor deposition (Halogen Chemical Vapor Deposition, HCVD) silicon carbide crystal growing device. Background technique [0002] Silicon carbide (SiC) is the third-generation semiconductor material developed after the first-generation semiconductor materials silicon (Si), germanium (Ge) and the second-generation semiconductor material gallium arsenide (GaAs). Since SiC has the characteristics of three times the wide bandgap of Si, ten times the high critical breakdown electric field of Si, three times the high thermal conductivity of Si, and twice the high carrier saturation concentration of Si, it is widely used in military and aerospace applications. It has superior application value in high temper...

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Problems solved by technology

The traditional silicon carbide crystal growth device usually only grows one crystal ingot (crystal rod) per furnace, and the general growth device is intermittent, that is, the raw material is heated and grown after being loaded into the furnace, and the temperature is lowered after the growth is completed, and it cannot be started until room temperature. The ingot is taken out of the furnace; relatively speaking, the growth efficiency is low, which cannot meet the huge demand of industrial scale development

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