System and method for controlling zone melting furnace for producing silicon single crystal by using abnormity polycrystalline material
A technology of control system and zone melting furnace, which is applied in the field of zone furnace control system, can solve problems such as melting zone eccentricity, zone melting silicon single crystal breakage, sparking, etc., and achieve the effect of ensuring product quality
Active Publication Date: 2012-01-18
ZHONGHUAN ADVANCED SEMICON MATERIALS CO LTD +1
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Problems solved by technology
In the production of zone-melting silicon single crystal, the bent polycrystalline material rod is likely to cause the eccentricity of the melting zone, which in turn may easily cause ignition due to the contact between the melting zone and the coil, and also easily lead to the breakage of the zone-melting silicon single crystal
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[0052] Embodiment: The model of the zone melting furnace adopted in this embodiment is PVA FZ-30. A coordinate system is established with the center of the furnace as the coordinate origin. The horizontal distance L between the distance meter and the furnace center O 0 is 500mm; the vertical distance L between the range finder and the solid-liquid interface of the polycrystalline material rod is 10mm; after the single crystal grows in equal diameter, the upper shaft speed r is 0.2rpm; the upper shaft speed v is 2mm / min; the polycrystalline material The time t required for the cross section of the rod to reach the solid-liquid interface is 5 min.
[0053] The sampling period in this embodiment is 1 minute, that is, ranging and calculation are performed every 1 minute. Start the system at 16:05, and see the table below for the specific data at 16:15. Among them, the offset vector at 16:10 The offset vector after time t calculated at 16:05 . Offset vector from 16:11 to 1...
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The invention relates to a system and method for controlling a zone melting furnace for producing silicon single crystal by using an abnormity polycrystalline material. The system comprises a zone melting furnace motion controller connected with a migration motor, at least three distance measurers and a PLC (Programmable Logic Controller). The three distance measurers are respectively connected with the PLC. The PLC is connected with the zone melting furnace motion controller. The PLC controller is used for transmitting migration vector data of an upper shaft of the zone melting furnace to the zone melting furnace motion controller in real time. The zone melting furnace motion controller is used for controlling the migration motor to drive an X shaft and an Y shaft of the upper shaft of the zone melting furnace to migrate so that the circle centre of any section of the whole abnormity polycrystalline material is centred in the process of reaching a solid-liquid interface. By using the improved control system and method, the problems of easy eccentricity of a melting zone, resulted from the abnormity polycrystalline material, even easiness for striking fire, resulted from the contact between the melting zone and a coil, and easy breakage of zone melting silicon single crystal, can be solved, therefore, the quality stability of the product is ensured.
Description
technical field [0001] The invention relates to a zone melting furnace control system, in particular to a zone melting furnace control system and a control method for producing silicon single crystals by using special-shaped polycrystalline materials. Background technique [0002] In actual production, the polycrystalline rods used in the production of zone melting silicon single crystals are not all standard cylindrical shapes, but have a certain degree of curvature. Such polycrystalline materials are called special-shaped polycrystalline materials. It can even be said that most polycrystalline bars have some degree of curvature. In the production of zone-melted silicon single crystal, the bent polycrystalline material rod will easily lead to the eccentricity of the melting zone, which will easily cause ignition due to the contact between the melting zone and the coil, and also easily lead to the breaking of the zone-melting silicon single crystal. Contents of the inventi...
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Login to View More IPC IPC(8): C30B13/30C30B29/06
Inventor 张雪囡康冬辉李建弘王彦君高树良沈浩平刘嘉
Owner ZHONGHUAN ADVANCED SEMICON MATERIALS CO LTD