Image sensor with insulating buried layer and manufacturing method thereof
An image sensor and insulating buried layer technology, applied in radiation control devices and other directions, can solve the problems of limited production of photodiodes, inability to make fully depleted SOI devices, and increase of silicon films, so as to improve the ability to resist high-energy particle radiation. Effect
Active Publication Date: 2012-10-24
SHANGHAI ADVANCED RES INST CHINESE ACADEMY OF SCI
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[0008] Therefore, the shortcoming of prior art is, when making CMOS image sensor with SOI, because the silicon film thickness of SOI is thinner, make photosensitive diode on it be restricted.
The thinner silicon film limits the thickness of the depletion layer of the photodiode, and the light absorption efficiency decreases
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[0025] Next, specific implementations of an image sensor with an insulating buried layer and a manufacturing method thereof according to the present invention will be described in detail with reference to the accompanying drawings.
[0026] attached figure 2Shown is a schematic diagram of the implementation steps of this specific embodiment, including: step S20, providing a support substrate, the surface of which has a continuous insulating buried layer and a continuous top semiconductor layer in turn; step S21, removing the optical sensing region The top semiconductor layer and the insulating buried layer, and further form grooves at corresponding positions in the supporting substrate; step S22, forming an isolation layer on the bottom and side walls of the groove, the material of the isolation layer is P-type semiconductor doping; Step S23, forming an optical sensing device on the surface of the isolation layer; Step S24, forming an insulating spacer between the driving cir...
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The invention provides an image sensor with an insulating buried layer. The image sensor is formed on the surface of a support substrate which is made of a semiconductor material, the image sensor comprises a drive circuit zone and an optical sensing zone, and the part of the support substrate in the drive circuit zone has a top semiconductor layer which is isolated from the support substrate through the insulating buried layer; a transistor in the drive circuit zone is formed in the top semiconductor layer, and an optical sensing member in the optical sensing zone is formed in the support substrate and is electrically isolated from the support substrate through a P+ doped separating layer; the drive circuit zone and the optical sensing zone are transversely isolated from each other through an insulating side wall.
Description
technical field [0001] The invention relates to an image sensor with an insulating buried layer and a manufacturing method thereof, in particular to an image sensor with an insulating buried layer capable of resisting high-energy particle radiation and a manufacturing method thereof. Background technique [0002] An image sensor is an electronic component widely used in the fields of digital imaging, aerospace and medical imaging. A charge coupled device (CCD) image sensor and a complementary metal oxide semiconductor (complementary metal oxide semiconductor, CMOS) image sensor are two common image sensors. CCD has low readout noise and dark current noise, and has high photon conversion efficiency, so it not only improves the signal-to-noise ratio, but also improves the sensitivity, and the incident light with very low light intensity can also be detected, and its signal will not be covered up. In addition, CCD also has a high dynamic range, which improves the use range of...
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IPC IPC(8): H01L27/146
Inventor 苗田乐陈杰汪辉汪宁尚岩峰田犁
Owner SHANGHAI ADVANCED RES INST CHINESE ACADEMY OF SCI