Image sensor with insulating buried layer and fabrication method thereof
An image sensor and insulating buried layer technology, which is applied in semiconductor/solid-state device manufacturing, radiation control devices, electrical components, etc., can solve the problems of limited production of photodiodes, decreased light absorption efficiency, and increased silicon film, so as to avoid sensor failure. , the effect of improving the ability to resist high-energy particle radiation
Active Publication Date: 2013-02-20
蚌埠航宇知识产权服务有限公司
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[0008] Therefore, the shortcoming of prior art is, when making image sensor with SOI substrate, because the silicon film thickness of SOI is thinner, make photosensitive diode on it be restricted.
The thinner silicon film limits the thickness of the depletion layer of the photodiode, and the light absorption efficiency decreases
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[0023] Next, specific implementations of an image sensor with an insulating buried layer and a manufacturing method thereof according to the present invention will be described in detail with reference to the accompanying drawings.
[0024] Attached figure 2 Shown is a schematic diagram of the implementation steps of this embodiment, including: step S20, providing a supporting substrate; step S21, forming a groove in the optical sensing area of the supporting substrate; step S22, using ion implantation in the supporting substrate The buried insulating layer of the driving circuit area and the bottom insulating isolation layer of the optical sensing area are formed in the buried insulating layer, and the top semiconductor layer is formed on the surface of the buried insulating layer at the same time; step S23, forming a surrounding optical sensing area around the bottom of the groove Sidewall insulating isolation layer; Step S24, use an epitaxial process to form an epitaxial sem...
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The invention provides an image sensor with an insulating buried layer and a fabrication method thereof. The image sensor is formed on the surface of a supporting substrate, and comprises a driving circuit area and an optical sensing area; the supporting substrate of the driving circuit area is provided with a top semiconductor layer, which is isolated from the supporting substrate by the insulating buried layer; transistors in the driving circuit area are formed in the top semiconductor layer, an optical sensing device in the optical sensing area is formed in the supporting substrate and isolated from the supporting substrate by an insulating and isolating layer, and the insulating and isolating layer surrounds the side and bottom of the optical sensing device; and the driving circuit area and the optical sensing area are transversely isolated from each other by an insulating sidewall.
Description
Technical field [0001] The invention relates to an image sensor with an insulating buried layer and a manufacturing method thereof, in particular to an image sensor with an insulating buried layer having the ability to resist high-energy particle radiation and a manufacturing method thereof. Background technique [0002] Image sensor is an electronic component widely used in the fields of digital imaging, aerospace and medical imaging. Charge coupled device (CCD) image sensors and complementary metal oxide semiconductor (CMOS) image sensors are two common image sensors. CCD has low readout noise and dark current noise, as well as high photon conversion efficiency, so it not only improves the signal-to-noise ratio, but also improves the sensitivity. The incident light with very low light intensity can also be detected. Be covered up. In addition, CCD also has a high dynamic range, which improves the use range of the system environment, and does not cause signal contrast due to l...
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IPC IPC(8): H01L27/146H01L21/265H01L21/762
Inventor 施琛陈杰汪辉尚岩峰汪宁田犁
Owner 蚌埠航宇知识产权服务有限公司