Method for manufacturing imaging sensor with insulating buried layer
A technology of image sensor and insulating buried layer, which is applied in the field of image sensor manufacturing with insulating buried layer, can solve the problems of limitation of making photosensitive diodes, decrease of light absorption efficiency, inability to make fully depleted SOI devices, etc., to avoid Sensor failure, effect of improving the ability to resist high-energy particle radiation
Inactive Publication Date: 2013-07-24
SHANGHAI ADVANCED RES INST CHINESE ACADEMY OF SCI
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[0008] Therefore, the shortcoming of prior art is, when making image sensor with SOI substrate, because the silicon film thickness of SOI is thinner, make photosensitive diode on it be restricted.
The thinner silicon film limits the thickness of the depletion layer of the photodiode, and the light absorption efficiency decreases
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[0021] Next, the specific implementation manner of the method for manufacturing an image sensor with an insulating buried layer according to the present invention will be described in detail with reference to the accompanying drawings.
[0022] attached figure 2 Shown is a schematic diagram of the implementation steps of this specific embodiment, including: step S20, providing a support substrate; step S21, forming an isolation trench at the junction of the drive circuit area and the optical sensing area of the support substrate; step S22, forming an isolation trench in the trench Filling the groove with an insulating medium to form an insulating spacer; step S23, forming an insulating buried layer in the driving circuit area of the supporting substrate, and simultaneously forming a top semiconductor layer in isolation on the surface of the insulating buried layer; step S24, using ion implantation Form an isolation layer surrounding the optical sensing region from the sid...
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The invention provides a method for manufacturing an imaging sensor with an insulating buried layer, comprising the following steps of: providing a support substrate; forming an isolated groove at the junction of a drive circuit area and an optical sensing area on the support substrate; filling insulating media in the groove to form an insulated side wall; forming an insulating buried layer in the drive circuit area on the support substrate, wherein the depth of the insulating buried layer is not more than that of the isolated groove, and forming a top semiconductor layer on the surface of the insulating buried layer in an isolated mode; adopting an ion implantation way to form an isolated layer surrounding the optical sensing area from a side face and a bottom in the support substrate, wherein the isolated layer is made of a P-type semiconductor material; forming an optical sensing device in the support substrate which is surrounded by the isolated layer; and forming a transistor in the top semiconductor layer of the drive circuit area.
Description
technical field [0001] The invention relates to a method for manufacturing an image sensor with an insulating buried layer, in particular to a method for manufacturing an image sensor with an insulating buried layer capable of resisting high-energy particle radiation. Background technique [0002] An image sensor is an electronic component widely used in the fields of digital imaging, aerospace and medical imaging. A charge coupled device (CCD) image sensor and a complementary metal oxide semiconductor (complementary metal oxide semiconductor, CMOS) image sensor are two common image sensors. CCD has low readout noise and dark current noise, and has high photon conversion efficiency, so it not only improves the signal-to-noise ratio, but also improves the sensitivity, and the incident light with very low light intensity can also be detected, and its signal will not be covered up. In addition, CCD also has a high dynamic range, which improves the use range of the system envi...
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IPC IPC(8): H01L27/146
Inventor 尚岩峰张俊超汪辉陈杰汪宁苗田乐
Owner SHANGHAI ADVANCED RES INST CHINESE ACADEMY OF SCI