Image sensor with insulating buried layer and manufacturing method thereof
A technology for image sensors and insulating buried layers, which is applied in the manufacture of semiconductor/solid-state devices, radiation control devices, electrical components, etc., and can solve problems such as limitations in the production of photosensitive diodes, decreased light absorption efficiency, and inability to make fully depleted SOI devices. , to avoid sensor failure and improve the ability to resist high-energy particle radiation
Active Publication Date: 2012-01-25
蚌埠航宇知识产权服务有限公司
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[0008] Therefore, the shortcoming of prior art is, when making image sensor with SOI substrate, because the silicon film thickness of SOI is thinner, make photosensitive diode on it be restricted.
The thinner silicon film limits the thickness of the depletion layer of the photodiode, and the light absorption efficiency decreases
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[0023] Next, specific implementations of an image sensor with an insulating buried layer and a manufacturing method thereof according to the present invention will be described in detail with reference to the accompanying drawings.
[0024] attached figure 2 Shown is a schematic diagram of the implementation steps of this specific embodiment, including: step S20, providing a support substrate, the surface of which has a continuous insulating buried layer and a continuous top semiconductor layer in turn; step S21, removing the optical sensing region The top semiconductor layer and the insulating buried layer; step S22, forming a bottom insulating isolation layer in the optical sensing area of the supporting substrate; step S23, forming an isolation ditch surrounding the optical sensing area in the optical sensing area of the supporting substrate Groove, from the bottom of the trench to expose the bottom insulating isolation layer; step S24, filling the trench with an insul...
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The invention provides an image sensor with an insulating buried layer. The image sensor is formed on the surface of a supporting substrate and comprises a driving circuit region and an optical sensing region, wherein the surface of the supporting substrate at the driving circuit region is provided with a top semiconductor layer; the top semiconductor layer is isolated from the supporting substrate through the insulating buried layer; a transistor in the driving circuit region is formed in the top semiconductor layer; an optical sensing device in the optical sensing region is formed in the supporting substrate and is electrically isolated from the supporting substrate through the insulating isolating layer; and the driving circuit region and the optical sensing region are transversely isolated from each other through an insulating side wall.
Description
technical field [0001] The invention relates to an image sensor with an insulating buried layer and a manufacturing method thereof, in particular to an image sensor with an insulating buried layer capable of resisting high-energy particle radiation and a manufacturing method thereof. Background technique [0002] An image sensor is an electronic component widely used in the fields of digital imaging, aerospace and medical imaging. A charge coupled device (CCD) image sensor and a complementary metal oxide semiconductor (complementary metal oxide semiconductor, CMOS) image sensor are two common image sensors. CCD has low readout noise and dark current noise, and has high photon conversion efficiency, so it not only improves the signal-to-noise ratio, but also improves the sensitivity, and the incident light with very low light intensity can also be detected, and its signal will not be covered up. In addition, CCD also has a high dynamic range, which improves the use range of...
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IPC IPC(8): H01L27/146H01L21/762
Inventor 陈志卿汪辉陈杰汪宁尚岩峰田犁
Owner 蚌埠航宇知识产权服务有限公司