Method for manufacturing tungsten target material

A production method and target technology, which are applied in the field of tungsten target production, can solve the problems of expensive molds, easy wear and tear, and the uniformity of the internal structure of tungsten targets cannot meet the requirements of increasingly high sputtering processes. Excellent uniformity

Active Publication Date: 2012-02-08
KONFOONG MATERIALS INTERNATIONAL CO LTD
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Problems solved by technology

[0007] The problem to be solved by the present invention is to propose a new manufacturing method of tungsten target material to solve the problem that in the existing hot pressing process, it is necessary to design a matching mold according to the size of

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  • Method for manufacturing tungsten target material

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[0026] As described in the background art, the uniformity of the internal structure of the tungsten target processed by the existing hot pressing process cannot meet the increasingly demanding sputtering process. The inventor analyzes that this is because the hot pressing is performed on a single axis. Pressure is applied in a direction (for example, a vertical direction), which makes the powder grains receive uneven force in all directions when they are formed into a target material. Therefore, the inventor proposes to adopt the hot isostatic pressing method in the sintering molding process. Specifically, the manufacturing method of the tungsten target material provided by the present invention includes: firstly, the tungsten powder is sealed by a vacuum sheath; then the hot isostatic pressing process is used for sintering molding; after the sintering molding is completed, cooling and removing the vacuum sheath to take out the tungsten target In the process of forming the tung...

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Abstract

The invention relates to a method for manufacturing a tungsten target material. The method comprises the following steps: providing tungsten powder; placing the tungsten powder into a vacuum package and vacuumizing; carrying out sinter molding by adopting a hot isostatic pressing process; after finishing the sinter molding, cooling and removing the vacuum package, and taking out the tungsten target material. With the adoption of the method for manufacturing the tungsten target material provided by the invention, the use of a mold is avoided, and meanwhile, both the compactness and the uniformity for the internal organizational structure of the formed tungsten target material are better than those of a tungsten target material formed by hot pressing.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for manufacturing a tungsten target. Background technique [0002] Vacuum sputtering is a process in which electrons accelerate to the substrate under the action of an electric field and collide with argon atoms, ionizing a large number of argon ions and electrons, the electrons fly to the substrate, and the argon ions accelerate to bombard the target under the action of an electric field A large number of target atoms are sputtered out, and the neutral target atoms (or molecules) are deposited on the substrate to form a film, and finally the purpose of coating the substrate surface is achieved. [0003] Tungsten targets are often used in the vacuum sputtering process. Early tungsten targets were obtained by melting and casting. However, the density of tungsten targets formed by melting and casting is difficult to control. In order to overcome this problem, p...

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Application Information

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IPC IPC(8): B22F3/14
Inventor 姚力军潘杰王学泽袁海军
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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