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A multi-quantum well tft-led array display substrate and its manufacturing method

A technology of TFT-LED and array display substrate, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc. It can solve problems such as poor color uniformity, difficulty in ensuring coordination and consistency of LED displays, and large volume.

Inactive Publication Date: 2015-07-29
GUIZHOU UNIV
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  • Application Information

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Problems solved by technology

However, the currently used splicing forms of LED displays have disadvantages such as low resolution, poor color uniformity, and large volume. The coordination and consistency of different splicing parts of the LED display are difficult to guarantee, the production cost is relatively high, and the heat dissipation design of high-power devices is difficult. , only applicable to problems such as large-screen display, which limits the further development of splicing LED color display devices

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  • A multi-quantum well tft-led array display substrate and its manufacturing method
  • A multi-quantum well tft-led array display substrate and its manufacturing method
  • A multi-quantum well tft-led array display substrate and its manufacturing method

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Embodiment Construction

[0080] A multi-quantum well TFT-LED array display substrate structure of the present invention is as follows Figure 24As shown: above the substrate 1, there are buffer layer 2, n-type GaN layer 3, tri-primary color (RGB) multi-quantum well light-emitting layer 4, and the tri-primary-color multi-quantum well light-emitting layer constitutes a white light-emitting region 9; On the well light-emitting layer 4 are p-type GaN layer 5 and transparent electrode layer 6 in sequence; n-type GaN layer 3, three-primary-color multi-quantum well light-emitting layer 4, p-type GaN layer 5 and transparent electrode layer 6 together form a display unit. A control area 7 is set on the unit, and a lead area 8 is provided between the display units; in the control area 7, there is a capacitor lower plate 10, a capacitor upper plate 12, and an insulating layer 25 between them. the capacitor. A working TFT composed of a working TFT gate 13, a working TFT channel 17, a working TFT source 22, a wor...

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Abstract

The invention discloses a multi-quantum well TFT-LED array display substrate and a manufacture method thereof. By employing semiconductor integration technology, a double TFT and a three primary colors multi-quantum well luminescence unit are integrated, white luminescence and control are realized, and combined with color film technology, color array display of a TFT-LED is realized. The method is characterized by: depositing a buffer layer with a complete structure and an n-type GaN layer with a complete structure on a large area monocrystalline substrate, through MOCVD technology and preparing a red green and blue three primary colors multi-quantum well luminescent layer on the n-type GaN layer, constructing a white luminescence area, a p-type GaN layer and a transparent electrode layer, and separating the three primary colors multi-quantum well luminescent layer, the p-type GaN layer and the transparent electrode layer as display arrays. On each separated luminescence array unit, through integrating two TFTs and a capacitor as a control circuit of the luminescence unit and covering a RGB three primary colors color film layer on a substrate surface, display of color is realized. According to the substrate and the method in the invention, insufficiency of present LED and LCD display can be overcome to a certain extent, display quality and a display effect are raised greatly, the manufacture method is compatible with present semiconductor technology, and industrialization is easy to realize.

Description

technical field [0001] The invention relates to an LED array display substrate and a manufacturing method thereof, in particular to a multi-quantum well TFT-LED array display substrate and a manufacturing method thereof. Background technique [0002] With the continuous improvement of people's material and cultural living standards, people's requirements for display technology are also getting higher and higher. Display technology is gradually developing towards flat panel, small size, light weight, low power consumption and other aspects. Due to the advantages of small size, low radiation and low power consumption, liquid crystal display has been developed rapidly and has become the mainstream of current display technology, gradually replacing traditional CRT display technology in many application fields. However, liquid crystal displays also have disadvantages such as relatively slow response speed and poor color reproduction performance. Since the 1990s, InGaN has succe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/15H01L21/77
Inventor 邓朝勇杨利忠雷远清杨小平胡绍璐
Owner GUIZHOU UNIV
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