Vapor Phase Growth Device

Abstract

Disclosed is a rotation / revolution type vapor phase growth apparatus capable of increasing the area of a semiconductor thin film that can be vapor-phase grown at a time, without upsizing a susceptor or the like. The vapor phase growth apparatus is a horizontal vapor phase growth apparatus having a rotation / revolution mechanism and includes a bearing member 13 provided in a circular opening formed on a disk-shaped susceptor 12, a soaking plate 14 mounted rotatably on the bearing member, an external gear member 15 mounted on the soaking plate, a ring-shaped fixed internal gear member 17 including an internal gear engaged with the external gear member, a heating unit 19 for heating a substrate 18 retained on the external gear member from a backside of the susceptor, and a flow channel 20 for guiding a raw material gas in a direction parallel to a surface of the substrate. An external diameter of the bearing member or a gear reference circle diameter of the external gear member is smaller than an external diameter of the substrate.

Description

technical field [0001] The present invention relates to a vapor phase growth apparatus, and more specifically, to a rotation / revolution type vapor phase growth apparatus for vapor-phase-growing a thin film, particularly a nitride-based compound semiconductor thin film, on a substrate surface while rotating / revolving a substrate . Background technique [0002] As a vapor-phase growth apparatus capable of performing vapor-phase growth on a large number of substrates at a time, a rotation / revolution type vapor-phase growth apparatus is known (for example, refer to Patent Document 1), and the apparatus is arranged in the circumferential direction of the outer peripheral portion of the revolving base. A rotation base and a soaking plate, bearings and external gears are provided on the outer circumference of the rotation base and the soaking plate, and the above-mentioned external gears are meshed with the internal gears provided on the inner surface of the reaction vessel, so tha...

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Problems solved by technology

[0004] However, in the rotation / revolution type vapor phase growth apparatus described in the above-mentioned Patent Document 1, there is a problem that the bearing is arranged outside the outer periphery of the substrate, so the minimum outer diameter of the rotation base is the size of the outer diameter of the substrate plus the size of the bearing. Because of the size obtained, the number of rotating bases arranged on the outer periphery of the revolving base is limited. In order to process many substrates, it is necessary to use a large-diameter revolving base, which also leads to flow channels and chambers. Increased size and increased usage of raw gas

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