Vapor Phase Growth Device

A vapor phase growth and component technology, applied in electrical components, gaseous chemical plating, coatings, etc., can solve the problems of increased raw material gas usage, limited number of rotating bases, etc., to achieve the effect of increasing the area

Active Publication Date: 2014-10-22
NIPPON SANSO CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, in the rotation / revolution type vapor phase growth apparatus described in the above-mentioned Patent Document 1, there is a problem that the bearing is arranged outside the outer periphery of the substrate, so the minimum outer diameter of the rotation base is the size of the outer diameter of the substrate plus the size of the bearing. Because of the size obtained, the number of rotating bases arranged on the outer periphery of the revolving base is limited. In order to process many substrates, it is necessary to use a large-diameter revolving base, which also leads to flow channels and chambers. Increased size and increased usage of raw gas

Method used

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Embodiment Construction

[0015] The gas-phase growth device shown in this embodiment is provided with a disc-shaped base 12 that can be rotatably arranged in a chamber 11, and the gas-phase growth device includes: annular bearing members 13, which are respectively arranged along the In a plurality of circular openings 12a formed in the circumferential direction of the outer peripheral portion of the base 12; a disc-shaped heat soaking plate 14, which is respectively rotatably mounted on each bearing member 13; an external gear member (rotation base) ) 15, which are respectively placed on each vapor chamber 14; an annular fixed internal gear member 17, which has an internal gear 16 meshing with the external gear member 15; The back side of the seat 12 heats the substrate 18 held on the surface of the above-mentioned external gear member 15 ;

[0016] A hollow shaft member 21 is provided at the center of the above-mentioned base 12. The hollow shaft member 21 extends downward of the base 12 and penetrat...

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PUM

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Abstract

Disclosed is a rotation / revolution type vapor phase growth apparatus capable of increasing the area of a semiconductor thin film that can be vapor-phase grown at a time, without upsizing a susceptor or the like. The vapor phase growth apparatus is a horizontal vapor phase growth apparatus having a rotation / revolution mechanism and includes a bearing member 13 provided in a circular opening formed on a disk-shaped susceptor 12, a soaking plate 14 mounted rotatably on the bearing member, an external gear member 15 mounted on the soaking plate, a ring-shaped fixed internal gear member 17 including an internal gear engaged with the external gear member, a heating unit 19 for heating a substrate 18 retained on the external gear member from a backside of the susceptor, and a flow channel 20 for guiding a raw material gas in a direction parallel to a surface of the substrate. An external diameter of the bearing member or a gear reference circle diameter of the external gear member is smaller than an external diameter of the substrate.

Description

technical field [0001] The present invention relates to a vapor phase growth apparatus, and more specifically, to a rotation / revolution type vapor phase growth apparatus for vapor-phase-growing a thin film, particularly a nitride-based compound semiconductor thin film, on a substrate surface while rotating / revolving a substrate . Background technique [0002] As a vapor-phase growth apparatus capable of performing vapor-phase growth on a large number of substrates at a time, a rotation / revolution type vapor-phase growth apparatus is known (for example, refer to Patent Document 1), and the apparatus is arranged in the circumferential direction of the outer peripheral portion of the revolving base. A rotation base and a soaking plate, bearings and external gears are provided on the outer circumference of the rotation base and the soaking plate, and the above-mentioned external gears are meshed with the internal gears provided on the inner surface of the reaction vessel, so tha...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/205C23C16/44H01L33/32
CPCH01L21/68771H01L21/68764H01L21/68785C23C16/4584
Inventor 山冈优哉内山康右
Owner NIPPON SANSO CORP
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