Semiconductor structure and manufacturing method thereof

A manufacturing method, semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of contact resistance reduction, contact hole bottom area reduction, etc., to reduce contact resistance , The effect of reducing the possibility of short circuit

Active Publication Date: 2012-05-16
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0011] However, in the above-mentioned prior art process, as the size of the device decreases, the bottom area of ​​the contact hole still decreases, and the degree of reduction of the contact resistance is limited.

Method used

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  • Semiconductor structure and manufacturing method thereof
  • Semiconductor structure and manufacturing method thereof
  • Semiconductor structure and manufacturing method thereof

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Embodiment Construction

[0030] In order to make the object, technical solution and advantages of the present invention clearer, the embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0031] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0032] The following disclosure provides many different embodiments or examples for implementing different structures of the present invention. To simplify the disclosure of the present invention, components and arrangements of specific examples are described below. Of course, they are only examples and are not int...

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Abstract

The invention provides a manufacturing method of a semiconductor structure. The method is characterized by comprising the following steps: covering a second medium layer on a first medium layer and comprising the following steps: firstly, forming a first contact hole with less inner diameter in the second medium layer; then etching the first medium layer so as to form a second contact hole with greater inner diameter; and finally, filling electric conducting materials in the first contact hole and the second contact hole so as to form contact plugs. Correspondingly, the invention also provides a semiconductor structure. The semiconductor structure and the manufacturing method are beneficial to the reduction of contact resistance.

Description

technical field [0001] The invention relates to the field of manufacturing semiconductor structures, in particular to a semiconductor structure and a manufacturing method thereof. Background technique [0002] With the development of semiconductor structure manufacturing technology, integrated circuits with higher performance and stronger functions require greater component density, and the size, size and space of each component, between components or each component itself need to be further reduced, correspondingly , the area where the source / drain region contacts the metal electrode is also reduced, and this reduced contact area leads to a significant increase in contact resistance. [0003] like Figure 9 As shown in the prior art U.S. patent application US2010 / 010904A1, a method for reducing the contact resistance of the source / drain region is proposed. The steps of the method are as follows: [0004] Etching the first dielectric layer 110 above the source / drain region ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768H01L23/52
CPCH01L21/76804H01L23/485H01L21/823475H01L2924/0002H01L2924/00
Inventor 尹海洲朱慧珑骆志炯
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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