Device capable of improving reverse breakdown voltage of PN (positive and negative) junction

Abstract

The invention discloses a device capable of improving a reverse breakdown voltage of a PN (positive and negative) junction, wherein the device comprises a first low-resistance semiconductor layer, a high-resistance semiconductor layer, a second low-resistance semiconductor layer, a first insulation anti-reflective coating and a second insulation anti-reflective coating; the second low-resistance semiconductor layer is positioned on the inner side surface of the first insulation anti-reflective coating, and the high-resistance semiconductor layer is positioned under the other side of the second low-resistance semiconductor layer; the second low-resistance semiconductor layer and the high-resistance semiconductor layer form a main PN junction, and the second low-resistance semiconductor layer and the first low-resistance semiconductor layer form an auxiliary PN junction; the doping concentration of the first low-resistance semiconductor layer is less than that of the high-resistance semiconductor layer; the contact area of the second low-resistance semiconductor layer and the high-resistance semiconductor layer is less than that of the first insulation anti-reflective coating and the second low-resistance semiconductor layer; and the depth of the second low-resistance semiconductor layer is less than that of the high-resistance semiconductor layer. According to the invention, the breakdown voltage of the main PN junction reaches the ideal plane breakdown, thus the reverse breakdown voltage of the PN junction is improved.

Description

technical field [0001] The invention relates to a device, in particular to a device capable of increasing the reverse breakdown voltage of a PN junction. Background technique [0002] The PN structure exists in almost all semiconductors, and many devices require the PN junction to work in reverse, so increasing its reverse breakdown voltage directly determines the operating voltage range of related devices. [0003] The PN junction in actual manufacturing is not an ideal one-dimensional planar structure, and cylindrical or spherical junctions will appear at the sides and corners of the PN junction. Usually the curvature of the junction surface will seriously affect the breakdown voltage of the junction, and the small curvature radius will easily lead to the concentration of the electric field, so that the breakdown voltage of the junction is lower than that of the parallel plane junction under the same conditions. [0004] In order to improve the breakdown voltage of the de...

AI Technical Summary

Problems solved by technology

These methods have their own disadvantages. For example, field plates and field-limiting rings can reduce the electric field at the junction edge, improve the breakdown voltage, and the process is simple, but they will consume more chip area.

Rational design of grinding angle or corrosion can make the PN junction achieve ideal planar breakdown, but the process is complicated

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