Phase change memory and manufacturing method thereof

A technology of phase change memory and manufacturing method, which is applied in the field of phase change memory and its manufacture, can solve the problems of high power consumption of phase change memory and failure to meet application requirements, and achieve the effect of reducing contact area and facilitating phase change

Active Publication Date: 2013-12-04
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] In practice, it is found that the power consumption of the phase change memory obtained by the existing manufacturing method is large, which cannot meet the needs of the application

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Phase change memory and manufacturing method thereof
  • Phase change memory and manufacturing method thereof
  • Phase change memory and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0040] The power consumption of the phase change memory obtained by the existing manufacturing method is large, which cannot meet the requirements of the application. After research by the inventor, it is found that the reason for the large power consumption of the phase-change memory is that the phase-change current of the phase-change memory is relatively large. The reason for the large phase change current is that the contact area between the phase change layer of the phase change memory and the contact plug below is relatively large.

[0041] In order to solve the above problems, the present invention provides a manufacturing method of phase change memory, please refer to Figure 5 , is a schematic flow chart of the manufacturing method of the phase change memory of the present invention. The methods include:

[0042] Step S1, providing a semiconductor substrate, on which an interlayer dielectric layer and a contact plug located in the interlayer dielectric layer are for...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a phase change memory and a manufacturing method thereof. The method comprises the following steps of: providing a semiconductor substrate, wherein an interlayer medium layer and a contact jack plug positioned in the interlayer medium layer are formed on the semiconductor substrate; forming an insulating medium layer covering the contact jack plug on the interlayer medium layer; forming a bowl-shaped opening in the insulating medium layer, wherein the contact jack plug is exposed out of the bottom of the bowl-shaped opening; and forming a phase change layer in the bowl-shaped opening. The phase change memory formed by using the method disclosed by the invention has small phase change current and low power consumption.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a phase-change memory and a manufacturing method thereof. Background technique [0002] Phase Change Random Access Memory (PCRAM) technology is based on the idea that S.R. Ovshinsky proposed in the late 1960s that phase change films could be applied to phase change storage media. As an emerging non-volatile storage technology, phase change memory has great advantages over flash memory in many aspects such as read and write speed, read and write times, data retention time, unit area, and multi-value realization. It has become the focus of current research on non-volatile storage technology. [0003] In the phase-change memory, the value stored in the memory (the value being "0" or "1") can be changed by performing heat treatment on the phase-change layer on which data is recorded. The phase change material constituting the phase change layer enters a crystalline state or ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
Inventor 何其旸张翼英
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap