Semiconductor device and manufacturing method thereof

Abstract

The invention relates to a semiconductor device, comprising a substrate, a channel region and a source / drain region located in the substrate, a gate and a gate sidewall located on the channel region, and nickel-based silicide located on the source / drain region. The semiconductor device is characterized in that the nickel-based silicide is an epitaxial thin film layer. According to the invention, by reasonably setting the nickel-based silicide material and processing temperature, the nickel-based silicide can bear high-temperature annealing for eliminating capacitance defects of a DRAM (Dynamic Random Access Memory), thus the source / drain parasitic resistance and contact resistance of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) of the DRAM are lowered and the semiconductor device is compatible with the traditional CMOS manufacturing technique.

Description

technical field [0001] The present invention relates to a semiconductor device and a manufacturing method thereof, in particular to a novel metal oxide semiconductor field effect transistor (MOSFET) structure with thermally stable nickel silicide and a manufacturing method thereof. Background technique [0002] MOS memory is a typical representative product of VLSI, which develops extremely rapidly and the products are constantly updated. The main product of MOS memory is random access memory (RAM), which is divided into static random access memory (SRAM) that stores information by bistable circuits, and dynamic random access memory (DRAM) that stores information by capacitors. [0003] As early as the mid-1970s, DRAM cells developed into a standard DRAM cell circuit form with a single-tube structure. like figure 1 Shown is the equivalent circuit of the single-tube unit. The single-tube unit is composed of a MOS tube and a capacitor (1T1C structure). The MOS tube plays the...

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Problems solved by technology

[0007] 1. A very narrow gate (about 50nm) will lead to increased resistance (fine line width effect);

[0008] 2. A large amount of Si is consumed during the silicidation process, which is unbearable and harmful especially for the fabrication of devices with ultra-shallow junctions or on thin SOI substrates;

[0009] 3. Intrinsically rough CoSi 2 / Si interface will reduce the performance of the device;

[0018] All in all, silicide is widely used as source-drain contact in DRAM transistor manufacturing in order to reduce source-drain parasitic resistance and contact resistance, CoSi 2 Because the technology itself has some disadvantages and cannot continue to be used, people hope to use nickel-based silicide in this industry, but nickel-based silicide is usually not able to withstand the high annealing temperature of DRAM capacitors

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