Wet-process etching cleaning device and wet-process etching cleaning method

Abstract

The invention provides a wet-process etching cleaning device and a wet-process etching cleaning method. According to the invention, the wet-process etching cleaning device comprises a chemical tank liquid diversion plate, wherein the chemical tank liquid diversion plate comprises a first closed area R, a second closed area S and a hole arrangement area, and the hole arrangement area is provided with a plurality of holes. The wet-process etching cleaning device is characterized in that: in the hole arrangement area of the chemical tank liquid diversion plate, a row of holes are arranged between every two wafer placement positions, and the quantity of holes in each row is not less than 8. The design of the chemical tank liquid diversion plate is optimized to improve the problems of inter-wafer uniformity, intra-wafer uniformity and undercutting of the etched layer in the wet-process etching process.

Description

technical field [0001] The invention relates to the field of semiconductor device manufacturing, and more specifically, the invention relates to a wet etching cleaning device and a wet etching cleaning method. Background technique [0002] Wet etching is a common process in the manufacturing process of semiconductor devices. Wet etching is a traditional etching method. In the wet etching process, the silicon wafer is immersed in a certain chemical reagent or reagent solution, so that the part of the film surface that is not masked by the resist reacts with the reagent and is removed. Such as figure 1 As shown, the resist 10 is arranged on the etched layer 20 on the silicon substrate 30, and the etched region A not covered by the resist 10 is removed due to the action of chemical reagents. [0003] For example, a silicon dioxide film is etched with a solution containing hydrofluoric acid, an aluminum film is etched with phosphoric acid, and the like. This method of etchin...

AI Technical Summary

Problems solved by technology

However, by comparing the structure B etched by the actual wet etching process with the ideal structure A, it can be seen that the actual etched structure cannot form an accurate pattern due to the existence of the undercut problem.

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