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SiC epitaxial growth master disk structure with satellite disks auto-rotating

An epitaxial growth, satellite disk technology, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problem of three 6-inch SiC wafers without self-rotation function, etc., to achieve high uniformity and improve the uniformity between wafers , Improve the effect of intra-chip uniformity

Inactive Publication Date: 2017-02-22
DONGGUAN TIANYU SEMICON TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, the three 6-inch SiC epitaxial growth equipment provided by Japan TEL has one of the biggest weaknesses, that is, the three 6-inch SiC wafers have no self-rotation function, only the main disk can rotate

Method used

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  • SiC epitaxial growth master disk structure with satellite disks auto-rotating
  • SiC epitaxial growth master disk structure with satellite disks auto-rotating
  • SiC epitaxial growth master disk structure with satellite disks auto-rotating

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Embodiment Construction

[0034] The present invention will be further described below in conjunction with specific embodiments and accompanying drawings.

[0035] See Figure 1-5 As shown, it is a SiC epitaxial growth master disk structure with satellite disk rotation, which includes: a main rotating disk 1, a number of satellite disks 2 installed in the main rotating disk 1 and used to carry SiC wafers 4, and fixed on the main rotating disk 1 The supporting rod 3 at the lower end, the satellite dish 2 can rotate by itself.

[0036] The main rotating disk 1 is a circular disk, and the main rotating disk 1 is provided with a plurality of tray grooves 11; specifically, the number of the tray grooves 11 is three, which are arranged along three diameters with an included angle of 120°. direction and equidistant from the center of the main rotating disk 1.

[0037] The satellite plate 2 is used to carry the SiC wafer 4 , which is rotatably installed in the tray groove 11 of the main rotating plate 1 . S...

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Abstract

The invention discloses a satellite epitaxial growth master disk structure with satellite disks auto-rotating. The SiC epitaxial growth master disk structure comprises a main rotary disk on which a plurality of tray slots are provided, a plurality of satellite disks for carrying SiC wafers, and a support rod, wherein the satellite disks are rotatably mounted in the tray slots, and the upper ends of the support rod is fixed with the main rotary disk. The main rotary disk is provided with a plurality of tunnels respectively located below the tray slots. The bottom of the main rotary disk is provided with a vertical channel penetrating the tunnels, a running-through channel is arranged in the support rod and abutted with the vertical channel, and the bottoms of the tray slots are downwardly provided with at least two inclined holes which are inclined and communicated with the tunnels; the channel and the vertical channel, the tunnels and the inclined holes form an air passage connecting the tray slots, and after air flows into the air passage, air drives the satellite disks to rotate automatically through the inclined holes. As the satellite disks can rotate automatically, the epitaxial growth of SiC wafers can be improved, as well as inner-wafer and inter-wafer uniformity including thickness and doping concentration, so as to meet the different requirements.

Description

[0001] Technical field: [0002] The invention relates to the technical field of high-temperature equipment for manufacturing silicon carbide epitaxial wafers, in particular to a SiC epitaxial growth main disk structure with satellite disks rotating on their own. [0003] Background technique: [0004] Large-area, high-quality SiC (silicon carbide) epitaxial growth is a key technology for the manufacture of a new generation of wide-bandgap SiC power semiconductors. It is the smallest size for industrialized manufacturing of SiC power semiconductors. Direction of development. [0005] The three main suppliers of SiC epitaxial equipment in the world are Aixtron of Germany, LPE of Italy and TEL of Japan. In the commercial SiC epitaxial equipment provided by them, the epitaxial growth chambers are respectively made of stainless steel 6-inch multi-chip (6 and 8 sheet) "warm wall" structure, horizontal quartz tube 6-inch single-piece "hot-wall" structure, and horizontal quartz tube ...

Claims

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Application Information

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IPC IPC(8): C30B25/12C30B29/36C23C16/458
CPCC30B25/12C23C16/4581C23C16/4584C30B29/36
Inventor 孙国胜杨富华宁瑾刘兴昉赵永梅王占国
Owner DONGGUAN TIANYU SEMICON TECH
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