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Crystalline solar cell, method for producing crystalline solar cell and method for producing solar cell module

A technology of solar cells and crystals, applied in circuits, electrical components, photovoltaic power generation, etc.

Active Publication Date: 2015-12-16
SCHOTT SOLAR AG (DE)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Degradation occurs again at high negative system voltages, so that recovery via compensating voltage must also be repeated periodically in this case

Method used

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  • Crystalline solar cell, method for producing crystalline solar cell and method for producing solar cell module
  • Crystalline solar cell, method for producing crystalline solar cell and method for producing solar cell module
  • Crystalline solar cell, method for producing crystalline solar cell and method for producing solar cell module

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Embodiment Construction

[0051] In the following description of preferred embodiments it is assumed that the structure and function of solar cells or solar cell modules are sufficiently known, in particular in p-type substantially doped (grunddotiert) crystalline silicon solar cells and modules produced from such solar cells aspect.

[0052] Furthermore, it should be noted that the invention also covers solar cells having a plurality of silicon nitride layers on the front side, as known from the prior art. In this context, the term front-side silicon nitride layer is understood as a synonym for one or more front-side silicon nitride layers. Furthermore, the given dimensions are basically to be understood as exemplary only, without thereby limiting the teaching of the present invention.

[0053] figure 1 A crystalline silicon solar cell 10 is only schematically shown in FIG. A crystalline silicon solar cell 10 has, for example, a 180 μm thick p-type substantially doped substrate 12 in the form of a ...

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Abstract

The invention relates to a crystalline solar cell (10) having a front n-type doped region (14) and a rear p-type doped region (16), front contacts (18, 20), rear contacts (24) and At least one front side first layer (22) made of SiN. In order to reduce the degradation of the parallel resistance, it is proposed that a group selected from SiN, SiOx, Al2Ox, SiOxNy:Hz, a-Si:H, TiOx is arranged between the first layer and the n-type doped region. A second layer (26) of at least one material of or comprising such material, and said second layer (26) is doped to form defects.

Description

technical field [0001] The invention relates to a crystalline solar cell having a front n-doped region and a rear p-doped region, a front contact, a rear contact and at least one front first layer made of or containing SiN, such as anti-reflective layer. The invention also relates to a method for producing a crystalline solar cell having a front n-type doped region, a rear p-type doped region, a front contact and a rear contact and at least one SiN or comprising SiN as the first layer of the front side layer, such as anti-reflection layer. The subject of the invention is also a method for producing a solar cell module comprising wired solar cells, each having a front n-doped region, a rear p-doped region, a front contact, a rear contact, at least A front side layer made of or containing SiN, and a layer selected from the group consisting of SiN, SiO x 、Al 2 o x , SiO x N y :Hz, a-Si:H, TiO x layer of at least one material from the group, wherein the solar cell is cover...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/02H01L31/0216H01L31/0224H01L31/048H01L31/068
CPCH01L31/02021H01L31/02167H01L31/02168H01L31/022466H01L31/048H01L31/068Y02E10/547H01L31/0216H01L31/04H01L31/18
Inventor 赫宁·纳格尔
Owner SCHOTT SOLAR AG (DE)