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Solution for preparing silicon nano-column arrays on surface of silicon slice and preparation method

A technology for the surface of silicon nanocolumns and silicon wafers, which is applied in the direction of nanotechnology, electrolytic inorganic material coating, circuits, etc., can solve problems such as the method of preparing silicon nanocolumn arrays that have not been mentioned, achieve fast processing speed, improve conversion efficiency, Good environmental compatibility

Inactive Publication Date: 2015-04-01
HOHAI UNIV CHANGZHOU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Literature (Seong-Ho Baek, Seong-Been Kim, Jang-Kyoo Shin, Jae Hyun Kim, Preparation of hybrid silicon wire and planar solar cells having ZnO antireflection coating by all-solution processes, Solar Energy Materials & Solar Cells 96 (2012) 251–256.) and literature (Priyamka Singh, Shailesh N. Sharmma and N. M. Ravindra, Applications of porous silicon thin films in Solar cells and biosensors, JOM, 26(6)(2010) 17-24.) respectively describe silicon wafers After cleaning the surface with HF acid, use NH4OH (30%) / H2O2 (30%) / H2O (1:1:5, v / v) at 60 o C corrosion for 30 minutes to prepare silicon nanopillar arrays and electrochemical etching with a solution containing HF acid to prepare silicon nanopillar arrays, but neither of them mentioned the method of preparing silicon nanopillar arrays on the surface of silicon wafers with micro plasma in solution , and all use HF acid that affects the environment

Method used

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  • Solution for preparing silicon nano-column arrays on surface of silicon slice and preparation method

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Embodiment 1

[0010] Example 1: 56g of sodium silicate and 44mL of glycerin solution were added to 1L of deionized water, the silicon wafer was used as the cathode, and the graphite was used as the anode, and treated at a voltage of 623V for 2 minutes, the column diameter of the silicon nanocolumn array was less than 500nm, It shows that the processing speed is fast and the efficiency is high, which can significantly reduce the processing cost of the silicon wafer surface.

Embodiment 2

[0011] Example 2: First, take 2 / 3 of deionized water in a 10L tank, dissolve 563g of sodium silicate and 794mL of glycerol in sequence under stirring, and finally add water to 10L to obtain an electrolyte, using a silicon chip as a cathode, graphite It is an anode, and it is treated for 3 minutes at a voltage of 583V, and the column diameter of the silicon nano-column array is less than 800nm.

Embodiment 3

[0012] Example 3: First take 2 / 3 of deionized water in a 10L tank, dissolve 563g of potassium silicate and 440mL of glycerol in turn under stirring, and finally add water to 10L to obtain an electrolyte, using a silicon chip as a cathode, graphite It is an anode, and it is treated at a voltage of 516V for 1 minute, and the column diameter of the silicon nano-column array is less than 600nm.

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Abstract

The invention discloses solution for preparing silicon nano-column arrays on the surface of a silicon slice and a preparation method. The silicon slice is arranged in the following solution comprising components by weight percentage: silicate 5-10%, organic alcohol 5-10% and water 80-85%. The silicate is sodium silicate or potassium silicate, the organic alcohol is ethanol or glycerin, and the water is deionized water. The silicon slice serves as cathode, a noble electrode material serves as anode, under voltage of 500-700V, the silicon slice is taken out after treatment for 1-3 minutes, and the silicon slice with the silicon nano-column arrays arranged on two faces is obtained. The method has good compatibility with environment, due to the fact that the solution is at room temperature, treatment speed is fast, and the treatment procedures of the silicon slice are simplified, so that the method has the advantages of being high in treatment efficiency, energy-saving and environment-friendly. Simultaneously, the diameter and the height of nano-columns of the nano-column arrays on the surface of the silicon slice after treatment can be adjusted according to process, the distribution density of the nano-columns also can be adjusted according to the process, so that cost is reduced, and conversion efficiency of light is improved.

Description

technical field [0001] The invention belongs to the technical field of silicon surface treatment, and in particular relates to a novel preparation process of a silicon nanocolumn array on a silicon surface, which is applicable to the field of solar photoelectric conversion. Background technique [0002] Silicon is the key material for the preparation of solar cells. Since 30% of the incident light is reflected on the surface of the silicon wafer, attention has been paid to improving the light absorption and conversion capabilities of the silicon wafer surface. The preparation of silicon nanopillar arrays on the silicon surface is the key to improving light absorption and conversion. One of the methods of ability. Literature (Seong-Ho Baek, Seong-Been Kim, Jang-Kyoo Shin, Jae Hyun Kim, Preparation of hybrid silicon wire and planar solar cells having ZnO antireflection coating by all-solution processes, Solar Energy Materials & Solar Cells 96 (2012) 251–256.) and literature (...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25D7/12C25D9/08B82Y40/00
Inventor 蒋永锋包晔峰杨可
Owner HOHAI UNIV CHANGZHOU