Method for analyzing crystallization rate and crystallization temperature of phase-change materials

Abstract

The invention relates to a method for analyzing crystallization rate and crystallization temperature of phase-change materials. The method includes the following steps, step 1 testing each phase-change material to be analyzed, and extracting relation curves of resistance and temperature at the same heating rate of the phase-change materials; step 2 performing first-order derivative derivation on fitting functions of the relation curves of the resistance and the temperature of all the phase-change materials, and analyzing and comparing the crystallization temperature of all the phase-change materials through first-order derivative curves; and step 3 performing second-order derivative derivation on the fitting functions of all the phase-change materials, and analyzing and comparing the crystallization rate of all the phase-change materials through second-order derivative curves. The method can compare various phase-change materials, thereby obtaining accurate comparative results, selecting most appropriate phase-change materials, and facilitating improvement of retention and operating speed of the phase-change materials in operation of devices.

Description

technical field [0001] The invention relates to a phase change material analysis method, in particular to a method for analyzing the crystallization rate and crystallization temperature of the phase change material, and belongs to the field of materials in phase change memory devices in microelectronic technology. Background technique [0002] Memory occupies an important position in the semiconductor market. Only DRAM (dynamnic Random Access Memory) and FLASH occupy 15% of the entire market. With the gradual popularization of portable electronic devices, the market for non-volatile memory is also growing. At present, FLASH Accounting for the mainstream of non-volatile memory, about 90%. However, with the advancement of semiconductor technology, FLAH has encountered more and more technical bottlenecks. First, the floating gate that stores charges cannot be thinned indefinitely with the development of integrated circuit technology. In addition, some other shortcomings of FLAS...

AI Technical Summary

Problems solved by technology

[0007] In the current material research, using RT curves to analyze crystallization temperature and crystallization rate mostly depends on sensory judgment, and there is no clear method guidance. Therefore, the present invention proposes a specific method for analyzing material crystallization temperature and crystallization rate based on RT curves. Through this The method can accurately compare the crystallization temperature and crystallization rate of phase change materials, so that the appropriate phase change material can be selected to improve its retention and operation rate in device operation applications

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