Programming method of MLC (Multi-Level Cell) storage unit and device thereof

A technology of storage unit and programming method, which is applied in the field of memory, can solve problems such as poor programming accuracy, achieve the effects of increasing differences, avoiding scattered distribution, and weakening changes

Active Publication Date: 2012-07-04
GIGADEVICE SEMICON (BEIJING) INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] The technical problem to be solved by the present invention is to provide a programming method and device for an MLC storage unit to solve the problem of poor programming accuracy in the prior art

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  • Programming method of MLC (Multi-Level Cell) storage unit and device thereof
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  • Programming method of MLC (Multi-Level Cell) storage unit and device thereof

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Embodiment Construction

[0039] In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0040] refer to figure 1 , shows a flow chart of Embodiment 1 of a programming method for an MLC memory cell according to the present invention. In Embodiment 1 of the present invention, the memory cell stores N-bit data, and there are 2 data in total. N A data state, the method comprising:

[0041] Step 101, verifying whether the threshold voltage of the memory cell is within the target threshold voltage range corresponding to the data state to be programmed; if yes, execute step 102; if not, execute step 103;

[0042] Each data state of the memory cell corresponds to a target threshold voltage range. For an N-bit memory cell, 2 N The different storage states correspond to 2 N target threshold voltage ranges, the larger the valu...

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Abstract

The invention provides a programming method of an MLC (Multi-Level Cell) storage unit, and a device thereof. The storage unit stores N bits of data which are in 2N data states. The method comprises the steps of: verifying whether the threshold voltage of the storage unit is within the target threshold voltage range corresponding to the data state to be programmed; ending the programming on the storage unit if yes; executing the threshold voltage raising step if no, and raising the threshold voltage of the storage unit to be in the (n+1)th target threshold voltage range through applying the nth programming verification voltage on the storage unit, wherein the (n+1)th target threshold voltage range is corresponding to the next adjacent data state of the current data state; and then returning to the verification step of threshold voltage, wherein the initial value of n is 1, the value of n is successively increased by 1 whenever returning to the verification step of the threshold voltage, and the maximum value of n is 2N-1. Through the method and the device disclosed by the invention, the accuracy of programming is improved.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a programming method and device for an MLC memory unit. Background technique [0002] Existing FLASH memories may include two categories: SLC (Single-Level Cell, single-level storage unit) Flash Memory and MLC (Multi-Level Cell, multi-level storage unit) Flash Memory. The difference between them is that each storage unit (cell) of SLC can only store one bit of data (two states 0 or 1), while each cell of MLC can store two bits of data (4 states, 00, 01, 10 or 11) or more than two bits of data, that is to say, the data density of MCL storage is at least twice that of SLC. [0003] The programming process of MLC is to inject charge into the floating gate of the memory cell by applying a programming verification voltage (that is, a programming pulse). At this time, the threshold voltage of the memory cell changes according to the amount of injected charge. Different storage states ...

Claims

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Application Information

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IPC IPC(8): G11C16/34
Inventor 苏志强舒清明
Owner GIGADEVICE SEMICON (BEIJING) INC
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