31results about How to "Improve programming accuracy" patented technology

Frequencies of viewing of first weekly broadcast programs by a user are detected in connection with past sections of the first weekly broadcast programs. At least one which has the detected viewing frequency greater than a predetermined threshold value is excluded from the first weekly broadcast programs to get second weekly broadcast programs. Program ranking measures representative of a relation between program attributes and user's preference are generated in response to (1) attributes of the past sections of the second weekly broadcast programs and (2) which of the past sections of the second weekly broadcast programs were viewed by the user. Future sections of the second weekly broadcast programs are ranked in response to (1) the generated program ranking measures and (2) attributes of the future sections of the second weekly broadcast programs.

In a non-volatile memory a group of memory cells is programmed respectively to their target states in parallel using a multiple-pass index programming method which reduces the number of verify steps. For each cell a program index is maintained storing the last programming voltage applied to the cell. Each cell is indexed during a first programming pass with the application of a series of incrementing programming pulses. The first programming pass is followed by verification and one or more subsequent programming passes to trim any short-falls to the respective target states. If a cell fails to verify to its target state, its program index is incremented and allows the cell to be programmed by the next pulse from the last received pulse. The verify and programming pass are repeated until all the cells in the group are verified to their respective target states. No verify operations between pulses are necessary.

A multiple pass programming scheme is optimized using capacitive coupling in the word line to word line direction during program-verify operations. A different pass voltage is used in different programming passes on an adjacent word line of a selected word line which is being verified. In particular, a lower pass voltage can be used in a first pass than in a second pass. The programming process may involve a word line look ahead or zigzag sequence in which WLn is programmed in a first pass, followed by WLn+1 in a first pass, followed by WLn in a second pass, followed by WLn+1 in a second pass. An initial programming pass may be performed before the first pass in which storage elements are programmed to an intermediate state and / or to a highest state.

In a non-volatile memory a group of memory cells is programmed respectively to their target states in parallel using a multiple-pass index programming method which reduces the number of verify steps. For each cell a program index is maintained storing the last programming voltage applied to the cell. Each cell is indexed during a first programming pass with the application of a series of incrementing programming pulses. The first programming pass is followed by verification and one or more subsequent programming passes to trim any short-falls to the respective target states. If a cell fails to verify to its target state, its program index is incremented and allows the cell to be programmed by the next pulse from the last received pulse. The verify and programming pass are repeated until all the cells in the group are verified to their respective target states. No verify operations between pulses are necessary.

A label printer applicator system programs labels having integrated circuits therein and applies the labels to a package. The applicator includes a tamp assembly having a tamp pad movement assembly and a tamp pad coupled thereto. An RF assembly, including an RF antenna, an RFID engine and antenna cable, is coupled to the tamp assembly. The tamp pad moves from a receiving position, where it receives a non-programmed label, to an extended position, where it applies the label to a package. The RFID engine provides RFID information to the RF antenna, which sends RFID information signals to the label to program the label. After the RFID label is applied to the package, the RF assembly sends test signals to the RFID label to determine whether the label has been properly programmed.

The invention relates to a projectile nutation angle extraction method based on radar Doppler data. The method is characterized by comprising the following specific steps of arranging a radar tail chasing distributed station at the side rear part of an artillery or a rocket artillery, carrying out tracking measurement on a flying artillery shell or a rocket artillery shell, and estimating the radial velocity of a centroid; calculating micro motion speeds; extracting a precession period; resolving a velocity vector; calculating the nutation angle of a projectile. According to the method, the difficult problem in nutation angle measurement of the flying projectile under the conditions of long distance is solved effectively, and the motion of the rotating projectile in the air includes micro motions relative to the centroid, such as precession and nutation, besides centroid motion; radar signals are subjected to periodic modulation, namely micro-Doppler effect, by the micro motions. Internal data of the radial velocity obtained through radar measurement contain information on the micro motions, such as nutation, a nutation angle curve of the projectile can be obtained through processing the internal data, and the nutation angle of the projectile is obtained through an established micro-motion velocity equation.

The invention discloses an OLED data driving circuit, an active TFT OLED panel based on the OLED data driving circuit and a driving method of the active TFT OLED panel based on the OLED data driving circuit. The current driving circuit is formed by the following parts including the current feed-forward part, the current feedback part, the comparison amplifier, the dynamic compensation part and the polarization power source. By means of the data driving circuit, current type TFT OLED pixels can be rapidly programmed with high accuracy. A gate driving line of the active TFT OLED panel based on the data driving circuit is two times that of a common panel, pixels in the direction of one gate driving line are divided into two different groups according to the parity of a dateline where the pixels are located, gate scanning time of two sets of pixels in the direction of the same line is respectively a half of the gate scanning time of the common panel, and two gate scanning lines are complemented and sequentially open the pixels in the direction of the same line.

A method programs a memory cell comprising: an initial phase in which a continuous voltage is applied to a drain terminal of said memory cell and a suitable programming voltage signal is applied to a gate terminal thereof; a regulation phase in which a constant voltage value is applied to said gate terminal and a voltage value of said drain terminal is regulated so as to be maintained at a fixed value until a threshold voltage value of said memory cell is set at a desired threshold voltage level; and a disable phase that stops said programming and is triggered as soon as a programming current value of said memory cell goes below a reference current value, said reference current value corresponding to the attainment by the threshold voltage value of said memory cell of the desired threshold voltage value. A programming circuit is suitable for implementing this method.

A multiple pass programming scheme is optimized using capacitive coupling in the word line to word line direction during program-verify operations. A different pass voltage is used in different programming passes on an adjacent word line of a selected word line which is being verified. In particular, a lower pass voltage can be used in a first pass than in a second pass. The programming process may involve a word line look ahead or zigzag sequence in which WLn is programmed in a first pass, followed by WLn+1 in a first pass, followed by WLn in a second pass, followed by WLn+1 in a second pass. An initial programming pass may be performed before the first pass in which storage elements are programmed to an intermediate state and / or to a highest state.

Frequencies of viewing of first weekly broadcast programs by a user are detected in connection with past sections of the first weekly broadcast programs. At least one which has the detected viewing frequency greater than a predetermined threshold value is excluded from the first weekly broadcast programs to get second weekly broadcast programs. Program ranking measures representative of a relation between program attributes and user's preference are generated in response to (1) attributes of the past sections of the second weekly broadcast programs and (2) which of the past sections of the second weekly broadcast programs were viewed by the user. Future sections of the second weekly broadcast programs are ranked in response to (1) the generated program ranking measures and (2) attributes of the future sections of the second weekly broadcast programs.

Systems and methods are provided for program identification. For example, a first audio fingerprint corresponding to a first audio signal is acquired; whether one or more second audio fingerprints in a predetermined fingerprint database match with the first audio fingerprint is detected, a second audio fingerprint corresponding to a second audio signal; and in response to one of the second audio fingerprints matching with the first audio fingerprint, a program associated with the matching second audio signal is provided as a result for program identification associated with the first audio signal.

The invention relates to a chip bonding programming control method suitable for the chip bonding machines of Janpan JUKI and SIEMENS companies, realized by the following steps: (1) using Gerber analysis software-GerbCAM to analyze Gerber files, finding the central coordinates of all the chip bonding positions according to pad combination on a substrate and numbering them according to their position numbers; (2) checking the position number indication to eliminate error and negligence and assure data accuracy; (3) converting the BOM list provided by a user into the BOM format required by the GerBCAM through the EXCEL, importing well-analyzed data files, reexporting them as CAD files, and by the arrangement of the EXECEL, selecting to generate a program for JUKI or SIEMENS chip bonding machine; and its beneficial effects: it makes the programming become a relatively easy course, not only enhancing programming accuracy but also extremely raising the efficiency; by estimation, the working hours it takes by a new programming method is 1 / 3 of the original ones, and besides, it does not occupy any equipment, therefore it makes purely off-line programming.

A label printer applicator system programs labels having integrated circuits therein and applies the labels to a package. The applicator includes a tamp assembly having a tamp pad movement assembly and a tamp pad coupled thereto. An RF assembly, including an RF antenna, an RFID engine and antenna cable, is coupled to the tamp assembly. The tamp pad moves from a receiving position, where it receives a non-programmed label, to an extended position, where it applies the label to a package. The RFID engine provides RFID information to the RF antenna, which sends RFID information signals to the label to program the label. After the RFID label is applied to the package, the RF assembly sends test signals to the RFID label to determine whether the label has been properly programmed.

In a non-volatile memory, a group of memory cells is programmed respectively to their target states in parallel using a multiple-pass index programming method which reduces the number of verify steps. For each cell a program index is maintained storing the last programming voltage applied to the cell. Each cell is indexed during a first programming pass with the application of a series of incrementing programming pulses. The first programming pass is followed by verification and one or more subsequent programming passes to trim any short-falls to the respective target states. If a cell fails to verify to its target state, its program index is incremented and allows the cell to be programmed by the next pulse from the last received pulse. The verify and programming pass are repeated until all the cells in the group are verified to their respective target states. No verify operations between pulses are necessary.

The invention discloses a source electrode driving circuit and a display device. The source electrode driving circuit comprises a source electrode current generation module for generating a data current signal, a clock signal generation module for generating a clock signal, a current-voltage conversion module for converting the data current signal into a corresponding data voltage signal and outputting the data voltage signal to a corresponding data signal line, and a switch selection module for transmitting the data current signal output by the source electrode current generation module to the current-voltage conversion module or directly transmitting the data current signal to a corresponding data line under control of the clock signal. The source electrode driving circuit and the display device can accelerate the speed of current programming on the basis of being capable of ensuring the advantages of high-precision gray level control and high stability of a current type pixel structure, thereby meeting the requirements on high-resolution large-size display.

The invention discloses a multivalue memristor self-adaption programming circuit for a nano cross rod structure and a method, and aims to solve a problem of precision of memristor multivalue programming and improve the efficiency of programming. The programming circuit is composed of a nano cross rod and N feedback control units; the nano cross rod comprises M horizontal nanowires, N vertical nanowires and M*N memristors; and each feedback control unit is connected with a longitudinal nanowire of the nano cross rod. The programming method comprises steps of: first conducting an erase operation on a row of memristors to be programmed; initializing resistance of the row of memristors to a high value; conducting a programming operation on the row of memristors to be programmed; each feedback control unit receiving a reference voltage signal through a reference voltage input terminal and programming the resistance values of the row of memristors to be programmed to a respective target resistance value. The resistance value of the multivalue memristor provided by the invention can be programmed and modified in a range of variation according to requirements, and the programming circuit has high precision and high efficiency of programming.

The invention discloses an FRU data burning method and system, equipment and a computer medium which are applied to a server. The method comprises the steps of: obtaining FRU data to be burnt; calculating the first check value of the FRU data to be burnt; and burning the FRU data to be burnt and the first check value to the target storage device, and setting the first check value to be readable inthe target storage device. In the present application, the method comprises the following steps: calculating the first check value of FRU data to be burnt; burning the FRU data to be burnt and the first check value to target storage device: setting the first verification value to be readable in the target storage device, so that the first verification value in the target storage device can be obtained no matter whether the FRU data to be burnt is in the standard format or not, the FRU data to be burnt which is burnt to the target storage device is verified through the first verification value, and the burning accuracy of the FRU data is improved. According to the FRU data burning system and device and the computer readable storage medium provided by the invention, the corresponding technical problems are also solved.

The invention provides a programming method for a multi-bit nonvolatile memory cell. The programming method comprises the steps of applying identical positive bias voltages on a substrate and a source terminal of a p-channel non-volatile memory cell, with a drain terminal grounded, applying a programming pulse voltage on a grid electrode; and programming the multi-bit nonvolatile memory cell in a setting state after a plurality of programming cycles comprising an electronic FN tunneling process and a channel hot electron injection process. Accordingly, the invention provides a programming method for a multi-bit nonvolatile memory unit array. A process for forming a memory cell threshold voltage steady state of the programming method provided by the invention is a self-convergence process and a repeated inspection process of a conventional programming method is omitted, so that programming speed of the multi-bit nonvolatile memory is effectively increased. By setting pulse parameters for the FN tunneling process and the channel hot electron injection process, the memory cell can be directly programmed to a designated state, so that programming accuracy of the multi-bit non-volatile memory cell is increased, and programming speed and accuracy can be taken into account at the same time.

A flash memory device is provided. The flash memory device includes a memory cell array and a pre-charge unit. The pre-charge unit, coupled to a plurality of bit lines corresponding with the memory cell array, pre-charges the bit lines to a predetermined voltage during a pre-charge stage. The pre-charge unit includes a voltage stabilizing unit to provide a constant current to the bit lines. Due to the voltage stabilizing unit, in a programming process, the voltage applied to the bit lines which are not related with programming may not drop as a result of current leakage. Therefore, the memory cells except the memory cell to be programmed are kept in cut off state, without a current passing. As a result, interference with the memory cells which are not to be programmed may be effectively avoided and the accuracy of programming may be improved.

The invention discloses a method for programming of a multi-bit semiconductor memory, and relates to the technical field of semiconductor memories. The method comprises the following steps: performing reset operation of all memory cells in the multi-bit semiconductor memory; performing a first turn of programming operation, that is programming threshold voltages of all the memory cells in the multi-bit semiconductor memory to be in a voltage range lower by 0.5 volt than the specified threshold voltages of the memory cells; and performing a second turn of programming operation, that is programming the threshold voltages of all the memory cells in the multi-bit semiconductor memory to be in a voltage range of + / - 0.05 volt of the specified threshold voltages of the memory cells. The invention effectively solves the contradiction between memory reset speed and reset precision, on one hand, improves the reset speed of the memory, on the other hand, greatly reduces the distribution scope of the memory cell threshold voltage after reset.

In non-volatile memory, a set of memory cells are individually programmed in parallel to their target states using a multi-pass index programming approach that reduces the number of verification steps. For each cell, a programming index is maintained to store the last programming voltage applied to that cell. Each cell is indexed during the first programming pass where a series of increasing programming pulses are applied. The first programming pass is followed by verification and one or more subsequent programming passes to trim any deviations to the respective target states. If the cell has not verified to its target state, its programming index is incremented and the cell is allowed to be programmed with the next pulse starting from the last pulse received. The verification and programming passes are repeated until all cells in the group are verified to their respective target states. No verification operations are required between pulses.

The invention discloses a source electrode driving circuit and a display device. The source electrode driving circuit comprises a source electrode current generation module for generating a data current signal, a clock signal generation module for generating a clock signal, a current-voltage conversion module for converting the data current signal into a corresponding data voltage signal and outputting the data voltage signal to a corresponding data signal line, and a switch selection module for transmitting the data current signal output by the source electrode current generation module to the current-voltage conversion module or directly transmitting the data current signal to a corresponding data line under control of the clock signal. The source electrode driving circuit and the display device can accelerate the speed of current programming on the basis of being capable of ensuring the advantages of high-precision gray level control and high stability of a current type pixel structure, thereby meeting the requirements on high-resolution large-size display.

A non-volatile memory device includes a first word line, a second word line, first memory cells, second memory cells, and an address decoder. The second word line is adjacent to the first word line. The first memory cells are connected to the first word line. The second memory cells are connected to the second word line. The second memory cells are connected to the first memory cells, respectively. The address decoder applies a first voltage to the first word line and applies a second voltage to the second word line in an over program period of the first memory cells. The first voltage is higher than a program voltage of the first and second memory cells. The second voltage is lower than a pass voltage of the first and second memory cells.

The invention discloses a burning device for chip processing, and belongs to the field of chip burning. The burning device for chip processing comprises a box body, a partition plate is arranged in the box body, a driving part is arranged at the top of the partition plate, a screw rod is connected to the output end of the driving part, burning assemblies are arranged below the partition plate, threaded sleeves are fixedly connected to the tops of the burning assemblies, and the threaded sleeves are in threaded connection with the screw rod; burning needles are arranged at the output ends of the burning assemblies, the burning needles are connected with the bottom wall of the box body in a sliding mode, and the multiple sets of burning assemblies are distributed in the box body at equal intervals; wherein the burning needles are connected with a pressing mechanism used for fixing a chip, the pressing mechanism comprises a fixing plate, a connecting rod and a cylinder body, the fixing plate is fixedly connected to the burning needles, the connecting rod is fixedly connected to the fixing plate, the positions of the connecting rod and the cylinder body can be changed, and an ash removal structure is arranged in the cylinder body; according to the invention, the groups of burning needles can be stretched out and drawn back, a chip is fixed when the burning needles are in contact with chip contacts, and a chip can be cleaned at the same time.

The invention provides a programming method of an MLC (Multi-Level Cell) storage unit, and a device thereof. The storage unit stores N bits of data which are in 2N data states. The method comprises the steps of: verifying whether the threshold voltage of the storage unit is within the target threshold voltage range corresponding to the data state to be programmed; ending the programming on the storage unit if yes; executing the threshold voltage raising step if no, and raising the threshold voltage of the storage unit to be in the (n+1)th target threshold voltage range through applying the nth programming verification voltage on the storage unit, wherein the (n+1)th target threshold voltage range is corresponding to the next adjacent data state of the current data state; and then returning to the verification step of threshold voltage, wherein the initial value of n is 1, the value of n is successively increased by 1 whenever returning to the verification step of the threshold voltage, and the maximum value of n is 2N-1. Through the method and the device disclosed by the invention, the accuracy of programming is improved.