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Method for cleaning a semiconductor wafer composed of silicon directly after a process of polishing of the semiconductor wafer

A semiconductor and wafer technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., to solve problems such as surface defects

Active Publication Date: 2014-11-26
SILTRONIC AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This residue must be removed as quickly as possible, since it attacks the sensitive surface of the semiconductor wafer, and must be removed as completely as possible, since particles remaining on the cleaned surface can cause surface defects, which are then Surface defects cannot be removed by cleaning
Furthermore, for economical reasons, this cleaning process must also be carried out in the shortest possible time

Method used

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  • Method for cleaning a semiconductor wafer composed of silicon directly after a process of polishing of the semiconductor wafer
  • Method for cleaning a semiconductor wafer composed of silicon directly after a process of polishing of the semiconductor wafer
  • Method for cleaning a semiconductor wafer composed of silicon directly after a process of polishing of the semiconductor wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] A semiconductor wafer consisting of silicon is chemically mechanically polished and, in the manner according to the invention, cleaned after polishing. The effectiveness of this method is shown in the number of particles measured on semiconductor wafers before they are packaged and shipped to customers. For half the number of semiconductor wafers examined, no more than 5 particles were found with a largest linear dimension greater than 37 nm. Semiconductor wafers were also cleaned according to standard methods in a comparative manner. For these semiconductor wafers, the corresponding number of particles is in the range of 15 to 20.

Embodiment 2

[0043] To show the importance of surfactants in step c), chemical mechanical polishing and cleaning were performed on the first and second set of semiconductor wafers. Each set consisted of 40 semiconductor wafers composed of silicon. According to the invention, the cleaning of the second group is carried out immediately after polishing. The cleaning of the first group differs from this only in that the surfactant is omitted in step c). The cleaned semiconductor wafers are subjected to a final cleaning according to the prior art and checked for the presence of particles with a size of 40 nm or more. figure 1 and 2 Shown are graphs of the distribution of particles found on the front side, where each graph shows the total number of particles found on the polished semiconductor wafer front side for each set of semiconductor wafers. figure 1 and figure 2 The comparison shows that in the semiconductor wafers cleaned according to the present invention (second group, figure 2 ...

Embodiment 3

[0045] To show the importance of pressure in step c), the third and fourth sets of semiconductor wafers were chemically mechanically polished and cleaned. Each set consisted of 10 semiconductor wafers composed of silicon. According to the invention, cleaning of the fourth group is carried out immediately after polishing. The cleaning of the third group differs from this only in that in step c) the sides of the semiconductor wafer are sprayed with an aqueous solution at a pressure of 100,000 Pa. For cleaning the semiconductor wafers of the fourth group, a corresponding pressure of 60,000 Pa was set. The cleaned semiconductor wafers are subjected to a final cleaning according to the prior art and checked for the presence of particles with a size of 40 nm or more. image 3 and 4 Shown are graphs of the distribution of particles found on the front side, where each graph shows the total number of particles found on the front side of the semiconductor wafer for each set of semico...

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Abstract

A method for cleaning a semiconductor wafer composed of silicon directly after a process of chemical mechanical polishing of the semiconductor wafer includes transferring the semiconductor wafer from a polishing plate to a first cleaning module and spraying both side surfaces of the semiconductor wafer with water at a pressure no greater than 1000 Pa at least once while transferring the semiconductor wafer. The semiconductor wafer is then cleaned between rotating rollers with water. The side surfaces of the semiconductor wafer are sprayed with an aqueous solution containing hydrogen fluoride and a surfactant at a pressure no greater than 70,000 Pa. Subsequently, the side surfaces are sprayed with water at a pressure no greater than 20,000 Pa. The wafer is then dipped into an aqueous alkaline cleaning solution, and then cleaned between rotating rollers with a supply of water. The semiconductor wafer is then sprayed with water and dried.

Description

technical field [0001] The present invention relates to a method for cleaning a semiconductor wafer composed of silicon from polishing agent residues immediately after chemical mechanical polishing of the semiconductor wafer. Background technique [0002] Chemical mechanical polishing (CMP) is commonly performed on semiconductor wafers composed of silicon to smooth one or both sides of the semiconductor wafer. After polishing, the semiconductor wafer is contaminated with residues of polishing agents and must be cleaned. This residue must be removed as quickly as possible, since it attacks the sensitive surface of the semiconductor wafer, and must be removed as completely as possible, since particles remaining on the cleaned surface can cause surface defects, which are then Surface defects cannot be removed by cleaning. Furthermore, for economical reasons, this cleaning process must also be carried out in the shortest possible time. [0003] DE 102007032385 A1 describes a ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
CPCH01L21/02052H01L21/02024H01L21/302
Inventor R·兰茨
Owner SILTRONIC AG