System and process for producing monosilane

Abstract

A description is given of a system and a process for producing monosilane (SiH4) by catalytic disproportionation of trichlorosilane (SiHCl3). The trichlorosilane is reacted in a reaction column (100) in the presence of a catalyst and subsequently purified in a rectification column (109). Between a reactive / distillation reaction zone (104; 105) in the reaction column (100) and the rectification column (109), one or more condensers (103) are arranged in which monosilane-containing reaction product from the reaction column (100) is partly condensed. However, this concerns solely condensers which are operated at a temperature above -40 DEG C.

Description

technical field [0001] The present invention relates to be used for by trichlorosilane (Trichlorsilan) (SiHCl 3 ) to produce monosilane (Monosilan) (SiH 4 ) device and a corresponding method that may be performed in such a device. Background technique [0002] High-purity silicon is usually produced in multistage processes starting from metallurgical silicon, which can have a relatively high content of contaminants. For the purification (Aufreinigung) of metallurgical silicon, the metallurgical silicon can be converted, for example, into trichlorosilane (SiHCl 3 ) of trihalosilane (Trihalogensilan), which is then thermally decomposed into high-purity silicon. Such an operating method is known, for example, from DE 2 919 086 . Instead of this method, high-purity silicon can also be obtained by thermal decomposition of monosilane, as described, for example, in document DE 33 11 650 . [0003] Monosilanes are obtainable in particular by disproportionation of trichlorosilan...

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However, this results in considerable outlays associated with this in terms of equipment and energy

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