Method and system for thin film deposition

Abstract

Disclosed herein is a thin film deposition system, which includes a process chamber configured to provide a laminar gas flow and virtually divided into several spaces when a reaction gas and a purge gas are consecutively supplied into the process chamber, so that atomic layer deposition can be performed with respect to a plurality of substrates while the virtually divided spaces are moved within the process chamber, thereby reducing a process tack time. The thin film deposition system includes cassettes in which a plurality of substrates is loaded such that the substrates are separated constant distances from each other and the distance between the respective substrates becomes a distance between laminar flows; a process chamber which receives the cassettes such that a distance between a cassette and an inner wall of the process chamber becomes the distance between laminar flows, and in which the substrates are subjected to atomic layer deposition; a gas supply unit disposed at one sidewall of the process chamber and supplying gas to all of the substrates placed in the cassettes in a direction horizontal to arrangement of the substrates such that a laminar flow of the gas is provided to leading ends of the substrates, to a space between substrates, and to a space between the substrate and the wall of the process chamber; and a gas exhaust unit disposed at an opposite side with respect to the gas supply unit within the process chamber and discharging the gas from the process chamber by suctioning the gas at rear sides of the substrates.

Description

technical field [0001] Embodiments of the present invention relate to methods and systems for thin film deposition, and more particularly, the present invention relates to such methods and systems for thin film deposition that include a process chamber configured to operate under a reaction gas and purge gas are sequentially fed into the processing chamber to provide stratified air flow, and the processing chamber is virtually divided into a plurality of spaces, so that when each virtual space moves in the processing chamber, for a plurality of basic Chips are capable of atomic layer deposition, thereby reducing processing times. Background technique [0002] Generally, a semiconductor device or a flat panel display is manufactured through a plurality of processes. In particular, a process of depositing a thin film on a wafer or glass (hereinafter referred to as "substrate") is inevitably performed. Such thin film deposition is achieved by sputtering, chemical vapor deposi...

AI Technical Summary

Problems solved by technology

[0005] However, because conventional equipment for atomic layer deposition supplies gas in a dotted manner rather than a flat manner through the nozzle holes of the diffuser plate, the gas is not uniformly distributed in the process chamber, thereby deteriorating the uniformity of the film

Images