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Flash memory operation method

An operation method and memory technology, applied in information storage, static memory, instruments, etc., can solve problems such as inconvenience, inability to distinguish critical state 200, and inappropriateness

Active Publication Date: 2015-06-17
MACRONIX INT CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In the end, it is impossible to distinguish the critical state 200 from the critical state 202, so that all memory cells in the memory change from the original 4 program levels to 3 program levels, and can only be operated as 1 bit.
[0007] This shows that above-mentioned existing flash memory operation method obviously still has inconvenience and defect in method and use, and urgently needs to be further improved
In order to solve the above-mentioned problems, the relevant manufacturers have tried their best to find a solution, but no suitable design has been developed for a long time, and the general method has no suitable method to solve the above-mentioned problems. This is obviously related. The problem that the industry is eager to solve

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Embodiment Construction

[0040] In order to further illustrate the technical means and effects adopted by the present invention to achieve the predetermined purpose of the invention, the following describes the specific implementation, methods and steps of the operating method of the flash memory according to the present invention with reference to the accompanying drawings and preferred embodiments. , features and their effects are described in detail below.

[0041] The foregoing and other technical contents, features and effects of the present invention will be clearly presented in the following detailed description of the preferred embodiments with reference to the drawings. Through the description of the specific embodiments, a more in-depth and specific understanding of the technical means and effects adopted by the present invention to achieve the predetermined purpose can be obtained. However, the accompanying drawings are only for reference and description, not for the present invention. be r...

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Abstract

The invention relates to a flash memory operation method. According to the operation method, when one storage bit in a plurality of storage bits has 2<n> program levels, storage bits adjacent to the storage bit are set into 2<n-1> program levels. Similarly, when another storage bit in a plurality of storage bits has 2<n-1> program levels, storage bits adjacent to the storage bit are set into 2<n> program levels. Each program level is corresponding to different critical voltage distributions. According to the program level mode, effective program levels can be efficiently utilized without increasing technological complexity.

Description

technical field [0001] The present invention relates to a method for operating a memory, in particular to a method for operating a flash memory (FLASH memory). Background technique [0002] Non-volatile memory technology is currently the most valued memory technology, one of which is to replace traditional memory cells with structures such as oxide-nitride-oxide (ONO) that have a charge trapping effect. Due to the advantages of easy fabrication and high density, stacked memory cells have received great attention and research from all walks of life, and can also be called charge trapping flash memory. In the charge-trapping type flash memory, the ONO of each memory cell can store charge, and the stored charge affects its threshold voltage Vth, and the threshold voltage can be sensed to represent data. [0003] At present, a multi-level cell (MLC) memory cell that can store more than two states has been developed to increase the storage density. The "multi-level" refers to th...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/02
Inventor 陈柏舟卢道政张耀文杨怡箴
Owner MACRONIX INT CO LTD