Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Laminated inverted chip packaging structure of ultra-fine spacing welding plates and bottom filling material preparation method

A flip-chip, packaging structure technology, applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, semiconductor devices, etc., and can solve problems such as difficulty in implementation

Active Publication Date: 2012-07-18
SAMSUNG SEMICON CHINA RES & DEV +1
View PDF4 Cites 25 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existing chip thinning technology that can realize mass production is generally the thinnest to 30um, so the thickness Tc of the lower chip 1 is at least 30um, resulting in the gap d1 between the lower chip 1 and the substrate 100 being less than 10um
This structure is currently difficult to implement

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Laminated inverted chip packaging structure of ultra-fine spacing welding plates and bottom filling material preparation method
  • Laminated inverted chip packaging structure of ultra-fine spacing welding plates and bottom filling material preparation method
  • Laminated inverted chip packaging structure of ultra-fine spacing welding plates and bottom filling material preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] Spatially relative terms such as "beneath," "lower," "above," "upper," etc. may be used herein to readily describe an element or feature shown in the figures in relation to other elements. or feature relations. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary term "below" can encompass both an orientation of "above" and "beneath". The device may be at other orientations (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein should be interpreted accordingly.

[0039] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a laminated inverted chip packaging structure of ultra-fine spacing welding plates and a preparation method thereof. According to the embodiment of the invention, the laminated inverted chip packaging structure comprises a substrate, a plurality of vertically-stacked chips and a plurality of conducting columns, wherein a plurality of welding plates are arranged on the substrate; one welding plate is arranged on each chip; and the conducting columns are arranged between the chips and the substrate; a part of the conducting columns are vertically stacked together; and the welding plates on the substrate and the welding plates on the chips are electrically connected through the conducting columns. Bottom filling materials are filled in gaps among the chips and gaps between the chips and the substrate and cover solder on each layer and the conducting columns. With the adoption of the laminated inverted chip packaging structure of the ultra-fine spacing welding plates disclosed by the embodiment of the invention, the requirements on the ultra-fine spacing welding plates on the vertically-stacked chips can be satisfied.

Description

technical field [0001] The invention relates to a stacked flip-chip packaging structure and a manufacturing method, in particular to a stacked flip-chip small-sized thin packaging structure with ultra-fine-pitch pads and a manufacturing method using bottom filling glue. Background technique [0002] Such as figure 1 As shown, in the traditional stacked package structure including two layers of flip chips, the interconnection between the chip pad and the substrate pad is usually the second chip 2 (the chip on the upper side and farther away from the substrate) through a larger The ball-shaped solder bumps are connected to the pads of the substrate 100, and the first chip 1 (the lower chip) is connected to the pads of the substrate through smaller ball-shaped solder bumps. [0003] In order to overcome the problem that solder bumps cannot be applied to ultra-fine-pitch pads in the traditional two-layer flip-chip stacked packaging structure, a conductive pillar interconnection...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L25/065H01L23/488H01L23/31H01L21/60
CPCH01L2224/92125H01L2224/16225H01L2224/32225H01L2224/73204H01L2924/00012H01L2924/00
Inventor 刘一波
Owner SAMSUNG SEMICON CHINA RES & DEV
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More