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Trench metal-oxide-semiconductor field effect transistor device

A technology of oxide semiconductor and field effect transistor, which is applied in the field of trench metal oxide semiconductor field effect transistor devices, can solve the problems that cannot be realized at the same time, and achieve the effect of reducing on-resistance and increasing breakdown voltage

Active Publication Date: 2015-01-28
CHENGDU MONOLITHIC POWER SYST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in traditional trench MOSFET devices, there is a problem of mutual constraints between the breakdown voltage BV and the on-resistance Rds(on). Increasing the breakdown voltage BV and reducing the on-resistance Rds(on) often cannot be achieved at the same time. This leads to a large energy loss when the device works at a large voltage

Method used

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  • Trench metal-oxide-semiconductor field effect transistor device
  • Trench metal-oxide-semiconductor field effect transistor device
  • Trench metal-oxide-semiconductor field effect transistor device

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Embodiment Construction

[0012] Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. In the various figures, identical elements are indicated with similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale.

[0013] The novel trench MOSFET device of the embodiment of the present invention will be described in detail below. In the following description, some specific details, such as specific doping types in the embodiments, are used to provide a better understanding of the embodiments of the present invention. It will be understood by those skilled in the art that embodiments of the invention may be practiced even without some details or other combinations of methods, materials, and the like.

[0014] In order to reduce the contradiction between the breakdown voltage BV and the on-resistance Rds(on), the present invention proposes a novel trench metal-oxide-semiconductor field-effect tran...

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Abstract

A trench gate MOSFET device has a drain region, a drift region, a trench gate having a gate electrode and a poly-silicon region, a super junction pillar juxtaposing the trench gate, a body region and a source region. By the interaction among the trench gate, the drift region and the super junction pillar, the break down voltage of the trench gate MOSFET device may be relatively high while the on-state resistance of the trench gate MOSFET device may be maintained relatively small.

Description

technical field [0001] Embodiments of the present invention relate to semiconductor devices, and more particularly, embodiments of the present invention relate to trench metal oxide semiconductor field effect transistor devices. Background technique [0002] At present, power devices are widely used in switching power supply, automotive electronics, industrial control and other fields. Trench metal oxide semiconductor field effect transistors (Trench-gate MOSFETs) are widely used due to the increase of the total channel width per unit area of ​​the chip, thereby reducing the drain-source on-resistance Rds(on). However, in traditional trench MOSFET devices, there is a problem of mutual constraints between the breakdown voltage BV and the on-resistance Rds(on). Increasing the breakdown voltage BV and reducing the on-resistance Rds(on) often cannot be achieved at the same time. This leads to a large energy loss when the device operates at a large voltage. Contents of the inv...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/06
CPCH01L29/41766H01L29/4236H01L29/42376H01L29/42368H01L29/1095H01L27/088H01L29/407H01L29/0634H01L29/7813
Inventor 张磊唐纳德·R·迪斯尼李铁生马荣耀
Owner CHENGDU MONOLITHIC POWER SYST