Resistive random access memory unit and memorizer

Abstract

The present disclosure provides a resistive random memory cell and a resistive random memory. The resistive random memory cell comprises an upper electrode, a resistive layer, an intermediate electrode, an asymmetric tunneling barrier layer, and a lower electrode. The upper electrode, the resistive layer, and the intermediate electrode constitute a resistive storage portion. The intermediate electrode, the asymmetric tunneling barrier layer, and the lower electrode constitute a selection portion. The resistive storage portion and the selection portion share the intermediate electrode. The selection portion may be disposed above or under the resistive storage portion. The asymmetric tunneling barrier layer comprises at least two materials having different barrier heights, and is configured for rectifying forward tunneling current and reverse tunneling current flowing through the resistive random memory cell. The present disclosure uses the asymmetric tunneling barrier layer for rectifying, so as to enable selection of the resistive random memory cell. The method for manufacturing the asymmetric tunneling barrier layer does not involve doping or high-temperature annealing processes, and the thickness of the asymmetric tunneling barrier layer is relatively small, which helps 3D high-density integration of the resistive random memory.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and memory, and in particular relates to a resistive variable random memory unit and memory for high-density data storage. Background technique [0002] Resistive random access memory (resistive random access memory, referred to as RRAM), as an emerging non-volatile storage technology, has great advantages in terms of cell area, device density, power consumption, programming / erasing speed, 3D integration and multi-value implementation, etc. Compared with FLASH, it has great advantages in many aspects, and has been highly concerned by large companies and research institutes at home and abroad. The continuous progress of resistive memory technology makes it one of the most powerful competitors for mainstream products in the future non-volatile memory technology market. [0003] Resistive memory has a simple cell structure of electrode / insulating layer / electrode. Therefore, the 1R cross-arr...

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Problems solved by technology

[0007] In the process of realizing the present invention, the inventor realized that the following technical problems existed in the prior art: in the resistive memory cell with 1D1R structure using PN junction as the gating unit, due to the need for additional doping and high-temperature activation process, there is no Conducive to three-dimensional high-density integration of resistive random access memory

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