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Bidirectional switch

A two-way switch and electrode technology, applied in transistors, electrical components, electrical solid devices, etc., can solve the problems of low reverse voltage resistance of MOSFETs and IGBTs

Inactive Publication Date: 2012-07-25
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Also, in general, MOSFETs and IGBTs have low reverse withstand voltage

Method used

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  • Bidirectional switch
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Examples

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Embodiment Construction

[0039] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 shows the circuit configuration of the bidirectional switch in this embodiment. As shown in FIG. 1, the bidirectional switch 100 in this embodiment includes a semiconductor element 101, a control unit 102, and a substrate potential stabilization unit 103. The control unit 102 controls the operation of the semiconductor element 101, and the substrate potential stabilization unit 103 The portion 103 stabilizes the substrate potential of the semiconductor element 101 .

[0040] The control unit 102 controls the bias voltage applied between the terminal S1 and the terminal G1 and the bias voltage applied between the terminal S2 and the terminal G2 of the semiconductor element 101 . Thereby, between the terminal S1 and the terminal S2 of the semiconductor element 101 , the current can flow in any direction, and the current can also be interrupted. Therefore, by conn...

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Abstract

Disclosed is a bidirectional switch, which is provided with a semiconductor element (101) and a substrate potential stabilizing section (102). The semiconductor element (101) has: a first ohmic electrode; a second ohmic electrode; and a first gate electrode and a second gate electrode which are provided, in that order from the side towards the first ohmic electrode, between the first ohmic electrode and the second ohmic electrode. The substrate potential stabilizing section (102) sets the potential of a substrate to a level lower than the higher potential among the potentials of the first ohmic electrode and the second ohmic electrode.

Description

technical field [0001] The present invention relates to a bidirectional switch, in particular to a bidirectional switch formed on a conductive substrate and made of nitride semiconductor. Background technique [0002] A bidirectional switch is a switch that conducts electricity in both directions and has voltage resistance to both positive and negative polarity voltages. It is used as the main switch of the matrix AC-AC converter and the main switch of the solid-state relay that can efficiently convert power. [0003] In a bidirectional switch, the switching loss represented by the product of the transitional voltage and current during switching is reduced, and the conduction due to the resistance of the semiconductor element itself (called on-state resistance) when it is in the on state Loss reduction is important. However, when a semiconductor element made of silicon (Si) is used to form a bidirectional switch, it is difficult to further reduce the on-state resistance fro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/80H01L21/28H01L21/338H01L21/822H01L21/8232H01L27/04H01L27/06H01L27/095H01L29/417H01L29/47H01L29/778H01L29/812H01L29/872
CPCH01L29/7786H01L27/0605H01L27/0705H01L29/2003H01L29/42316H01L29/1066H01L2224/48247H01L2224/0603H01L2924/13055H01L2924/13091H01L2924/181H01L2924/00H01L2924/00012
Inventor 森田竜夫
Owner PANASONIC CORP