Unlock instant, AI-driven research and patent intelligence for your innovation.

Nonvolatile memory system and flag data input/output method for the same

A non-volatile storage and data technology, applied in the fields of sign data input/output and non-volatile storage systems, can solve the problems of reducing the integration level of storage devices and difficult to optimize the operating efficiency of non-volatile storage systems.

Inactive Publication Date: 2012-08-01
SK HYNIX INC
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0017] Therefore, since the area of ​​the storage device is increased to accommodate the input / output control unit 114, the data input / output lines FDIL and FDOL, and other components for the operation flag storage area 114, the degree of integration of the storage device is reduced.
In addition, since the main storage area 112 and the flag storage area 114 operate independently, it may be difficult to optimize the operating efficiency of the nonvolatile storage system

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Nonvolatile memory system and flag data input/output method for the same
  • Nonvolatile memory system and flag data input/output method for the same
  • Nonvolatile memory system and flag data input/output method for the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] Reference will now be made in detail to the exemplary embodiments consistent with the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts.

[0031] A non-volatile storage system and related flag data input / output method will be described below. According to an exemplary aspect, various embodiments may be configured such that an input timing of flag data and an input timing of main data are different from each other in a nonvolatile storage system. Since the main data and the flag data are input at different timings, the flag data can be input via the main data input line, for example.

[0032] However, the output timing of the main data may be the same as that of the flag data. Accordingly, since data is stored in the page buffer of the flag cell during output of the flag data, the state of the flag cell can be determined...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Various embodiments of a nonvolatile memory system and related methods are disclosed. In one exemplary embodiment, the memory system may include: a memory area including a main memory area and a flag memory area; and an input / output controller configured to receive main data through a main data input line and provide the received main data to a page buffer circuit in response to a main data input control signal. The input / output controller may be further configured to receive flag data through the main data input line and provide the received flag data to the page buffer circuit in response to a flag data input control signal.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2011-0009799 filed with the Korean Intellectual Property Office on Jan. 31, 2011, the entire contents of which are incorporated herein by reference. technical field [0003] Various embodiments of the present invention relate to a semiconductor memory system and related methods. Specifically, some embodiments relate to a non-volatile storage system and a flag data input / output method of the non-volatile storage system. Background technique [0004] Nonvolatile memories including flash memories are widely used in mobile multimedia products because they consume less power, have higher resistance to adverse effects, and can be miniaturized. [0005] Non-volatile storage systems have been developed from single-level cells (cells) to multi-level cells to increase integration within their storage area. When programming data into a multi-level cell, a fl...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/02G11C16/06G11C16/34
CPCG11C16/06G11C16/02G11C16/10G11C16/34G11C16/26
Inventor 金珉秀梁彰元
Owner SK HYNIX INC