Semiconductor wafer and semiconductor device

Abstract

The invention provides a semiconductor wafer and a semiconductor device. The embodiment of the invention is especially applicable to the application of substrate replacement, such as the manufacture of vertical-structure LED (Light Emitting Diode). The semiconductor wafer comprises one or more buffer layers, one or more epitaxial layers, one or more metal layers and a second substrate, wherein a plurality of polishing touch stop blocks, are formed in the one or more buffer layers, the one or more epitaxial layers are arranged on the one or more buffer layers, the one or more metal layers are additionally arranged on the one or more epitaxial layers, and the second substrate is adhered, bonded or electroplated to the one or more metal layers. The semiconductor device comprises a plurality of polishing touch stop blocks, one or more buffer layers, one or more epitaxial layers, one or more metal layers and a second substrate, wherein the polishing touch stop blocks are arranged on the wafer, the one or more buffer layers are formed on the polishing touch stop blocks, the one or more epitaxial layers are arranged on the one or more buffer layers, the one or more metal layers are arranged on the one or more epitaxial layers, and the second substrate is adhered, bonded or electroplated to the one or more metal layers.

Description

[0001] This application is a divisional application of the invention patent application with the application number 200880000044.7 and the invention title "semiconductor wafer and semiconductor device and its manufacturing method". technical field [0002] The present invention relates to semiconductor wafers and semiconductor devices. Background of the invention [0003] The fabrication of semiconductor wafers, and their subsequent use in the fabrication of semiconductor devices, is a well-developed technology. There are many different methods of fabricating semiconductor wafers, and there are also many known methods of fabricating semiconductor devices from prefabricated wafers. Semiconductor devices are ubiquitous in modern technological equipment and installations. [0004] Although many wafers and semiconductor devices are fabricated on silicon substrates or similar materials, some devices are better suited to be fabricated on sapphire substrates, such as gallium nitri...

AI Technical Summary

Problems solved by technology

[0005] However, known methods of fabricating vertically structured GaN-based LEDs, as well as other semiconductor devices, have some limitations because the LLO process can be inappropriate, destructive, and inefficient for fabricating reliable and efficient LEDs

Furthermore, due to the selective etching of the different GaN layers, it may be difficult to distinguish the interface between the different layers

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