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Measuring circuit and measuring method of fluctuation of threshold voltage of MOS (Metal Oxide Semiconductor) device

A MOS device, threshold voltage technology, applied in the direction of measuring electrical variables, measuring current/voltage, measuring devices, etc., to achieve the effect of reducing complexity and time-consuming

Active Publication Date: 2015-05-13
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] The technical problem to be solved by the present invention is: how to reduce the complexity of the test device structure and reduce the time spent on measurement

Method used

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  • Measuring circuit and measuring method of fluctuation of threshold voltage of MOS (Metal Oxide Semiconductor) device
  • Measuring circuit and measuring method of fluctuation of threshold voltage of MOS (Metal Oxide Semiconductor) device
  • Measuring circuit and measuring method of fluctuation of threshold voltage of MOS (Metal Oxide Semiconductor) device

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Experimental program
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Embodiment 1

[0048] In this embodiment, the MOS transistors to be tested and the standard MOS transistors are all connected in series with PMOS transistors in a 65nm process. Such as figure 1 As shown in , the DC voltage of Vb1 is applied to the gate terminal of MP1 tube, and the DC voltage of Vb2 is applied to the gate terminal and drain terminal of MP2 tube. To enable the circuit to realize the normal function of testing the threshold difference between the MP1 tube and the MP2 tube, it must be ensured that both tubes are working in the saturation region. Considering that the usual threshold of the PMOS transistor under the 65nm process is around 0.4V, and the power supply voltage VDD=1.2V, so V b1 =700mV, V b2 =200mV.

[0049] Because the gate terminal of the MP2 tube is connected to the drain terminal, it must work in a saturated state, and the V of the MP1 tube GS1 =0.7-1.2=-0.5V, to ensure the conduction of the tube. Because two tubes are connected in series, there must be I p1...

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Abstract

The invention discloses a measuring circuit and a measuring method of the fluctuation of a threshold voltage of an MOS (Metal Oxide Semiconductor) device and relates to the technical field of an integrated circuit. The measuring circuit comprises an MOS tube to be measured and a standard MOS tube, which have the same type; and the MOS tube to be measured is connected with the standard MOS tube in series. The fluctuation of the threshold voltage of the MOS tube to be measured is measured through the MOS tube to be measured and the MOS tube, which are connected in series; and therefore, the complexity of the structure of a testing device is reduced and the time for measuring is reduced.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to a measuring circuit and a measuring method for the fluctuation of the threshold voltage of a MOS device. Background technique [0002] For MOS devices, when Si and SiO 2 When the interface electron concentration is equal to the hole concentration, the MOS device is in a critical conduction state, and the gate voltage of the device is defined as the threshold voltage V TH , which is one of the important parameters of MOSFET. can prove [0003] V TH = Φ MS + 2 Φ F + Q dep C ox [0004] where Φ MS is the voltage value of the difference between the work function of the polysilicon gate and the silicon substrate, Φ F =(kT / q)ln...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R19/00
Inventor 洪杰何燕冬张钢刚张兴
Owner PEKING UNIV