Semiconductor device and manufacturing method of semiconductor device

A manufacturing method and semiconductor technology, which are applied in semiconductor/solid-state device manufacturing, semiconductor devices, radiation control devices, etc., can solve problems such as affecting spectroscopic characteristics, affecting wafer yield, and strict allowable position offset in lithography process. Suppress the effect of position shift

Active Publication Date: 2012-08-29
KIOXIA CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In particular, in the CMOS image sensor, the allowable positional displacement of the photolithography process is strict, and since it affects the spectral characteristics, it directly affects the yield of the wafer.

Method used

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  • Semiconductor device and manufacturing method of semiconductor device
  • Semiconductor device and manufacturing method of semiconductor device
  • Semiconductor device and manufacturing method of semiconductor device

Examples

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no. 1 Embodiment

[0024] The method of manufacturing a semiconductor device of this embodiment can be applied to, for example, a method of manufacturing a backside illuminated CMOS image sensor. Use the following Figure 1 to Figure 6 The cross-sectional view of the semiconductor device of the present embodiment is described.

[0025] As the first substrate 1 used as the device wafer, for example, an SOI wafer and / or a single-layer or multi-layer epitaxial (Epitaxial) substrate is used. figure 1 A cross-sectional view showing a case where an SOI wafer is used as the first substrate. The first substrate 1 includes a silicon layer 10 , a BOX oxide film functioning as an etching stop layer 3 to be described later, and a silicon layer 4 .

[0026] An active layer (active layer) is formed by repeating a process called FEOL (Front End of Line), such as a photolithography process, a film forming process, an etching process, an ion implantation process, and the like on the silicon layer 4 (photodiode...

no. 2 Embodiment

[0042] The manufacturing method of the semiconductor device of this embodiment can be applied to, for example, the manufacture of a backside illuminated CMOS image sensor. Use the following figure 1 , Figure 7 to Figure 12 The cross-sectional view of the semiconductor device of the present embodiment is described.

[0043] As the first substrate used as a device wafer, such as figure 1 As shown, for example SOI wafers and / or single-layer or multi-layer epitaxial (Epitaxial) substrates are used. The first substrate 1 includes a silicon layer 10 , a BOX oxide film functioning as an etching stop layer 3 to be described later, and a silicon layer 4 .

[0044] An active layer is formed by repeating a process called FEOL (Front End of Line), such as a photolithography process, a film forming process, an etching process, an ion implantation process, etc. on the silicon layer 4 (photodiode layer). Devices such as transistors and / or photodiodes are fabricated in the active layer. ...

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PUM

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Abstract

A manufacturing method of a semiconductor device according to embodiments includes forming a photodiode layer, which is an active region including a photodiode, on a main surface of a first substrate, forming a wiring layer, which includes a wire and a dielectric layer covering the wire, on the photodiode layer, and forming a dielectric film on the wiring layer. The manufacturing method of the semiconductor device according to the embodiments further includes bonding a second substrate to the dielectric film of the first substrate so that a crystal orientation of the photodiode layer matches a crystal orientation of the second substrate.

Description

[0001] This application is based on Japanese Patent Application No. 2011-38439 filed on February 24, 2011, and enjoys the priority of this application. The entire content of this Japanese patent application is cited in the present application. technical field [0002] Embodiments of the present invention relate to a semiconductor device and a method of fabricating the semiconductor device. Background technique [0003] In a back-illuminated CMOS image sensor, a device wafer on which a wiring layer is formed and a support wafer for supporting the device wafer must be bonded by direct bonding, and then Si of the device wafer must be removed to fabricate an electrode for extracting electrodes to a package. wiring layer. [0004] If a lithography process is performed after removing Si of the device wafer, there is a problem that the wiring layer is shifted by about 10 to 500 nm from the original correct position. In particular, in a CMOS image sensor, the allowable amount of p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/1464H01L21/84H01L27/1203H01L27/14621H01L27/14627H01L27/14634H01L27/1469
Inventor 本乡悟史谷田一真堀哲浩高桥健司沼田英夫
Owner KIOXIA CORP
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