Methods, structures and devices for increasing memory density

Abstract

Non-volatile memory devices comprising a memory string including a plurality of vertically superimposed diodes. Each of the diodes may be arranged at different locations along a length of the electrode and may be spaced apart from adjacent diodes by a dielectric material. The electrode may electrically couple the diodes of the memory strings to one another and to another memory device, such as, a MOSFET device. Methods of forming the non-volatile memory devices as well as intermediate structures are also disclosed.

Description

[0001] Related Application Cross Reference [0002] This application claims the filing date of U.S. Patent Application No. 12 / 610,922, "METHODS, STRUCTURES AND DEVICES FOR INCREASING MEMORY DENSITY," filed November 2, 2009 rights and interests. technical field [0003] Embodiments of the invention relate to methods, structures, and devices for increasing memory density, and more particularly to methods for forming multilayer semiconductor structures, as well as resulting structures and devices incorporating such structures. Background technique [0004] Non-volatile memory devices are used to store digital data for use in computer systems and other electronic devices. A nonvolatile memory does not change state immediately after the power applied to it is removed or fails, and thus the nonvolatile memory retains stored data even for subsequent search. Examples of nonvolatile memory cells include Magnetic Random Access Memory (MRAM), Ferroelectric Random Access Memory (FRA...

AI Technical Summary

Problems solved by technology

However, conventional nonvolatile memory cells utilize a significant amount of real estate on the semiconductor substrate, and thus limit the density of nonvolatile memory cells

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