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Ampoule for growth of zinc selenide single crystals

A single crystal, zinc selenide technology, applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems of complex growth steps and high cost of zinc selenide single crystal, and achieve the guarantee of single nucleus growth, low stress and uniformity Good results

Inactive Publication Date: 2012-09-19
NORTHWESTERN POLYTECHNICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to overcome the shortcomings of complex zinc selenide single crystal growth steps and high cost in the prior art, the present invention proposes an ampoule for zinc selenide single crystal growth

Method used

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  • Ampoule for growth of zinc selenide single crystals
  • Ampoule for growth of zinc selenide single crystals
  • Ampoule for growth of zinc selenide single crystals

Examples

Experimental program
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Effect test

Embodiment 1

[0031] This embodiment prepares the zinc selenide single crystal that size is 12 * 10 * 8mm, uses the ampoule (such as figure 1 As shown), the ampoule is placed horizontally in the tube furnace, consisting of a Φ16×100mm quartz tubular body, which is divided into a growth area and a raw material area. The shape of the end of the growth zone is a cone, and the length of the cone is 25 mm. The centerline of the cone is coaxial with the centerline of the ampoule, called the central axis. On the cross-section passing through the central axis of the growth zone of the ampoule, the two elliptical arcs that constitute the cone intersect with a straight line that is 9mm away from the vertebral point on the axis, and the cone angle θ formed by the two tangents passing through this intersection is 25°; There is a ring-shaped quartz baffle in the zone, the diameter of the hole in the middle of the baffle is 6mm; the quartz baffle is perpendicular to the ampoule wall, 20mm away from the ...

Embodiment 2

[0048] This embodiment prepares a single crystal of zinc selenide with a size of 13×8×8mm, and uses an ampoule placed vertically to grow a single crystal of zinc selenide, such as figure 2 shown. The ampoule is vertically placed in the tube furnace. The ampoule is composed of a Φ16×150mm quartz tubular body, which is divided into a growth area and a raw material area. The end of the growth area is a cone with a length of 30mm. It passes through the ampoule growth area On the cross-section of the central axis, the two arcs forming the cone intersect at two points the straight line 10mm away from the vertebral point on the central axis, and the cone angle θ formed by the two tangents of the arc passing through these two points is 18°.

[0049] The technique of the present embodiment is according to the following steps successively:

[0050] 1. To clean the ampoules:

[0051] The cleaning process adopts a combination of comprehensive cleaning, strong hydrogen-oxygen flame baki...

Embodiment 3

[0065] This embodiment prepares a single crystal of zinc selenide with a size of 16×8×10mm, using an ampoule such as figure 2 As shown, the ampoule is vertically placed in the tube furnace. The ampoule is composed of a Φ20×120mm quartz tubular body, which is divided into a growth area and a raw material area. The end of the growth area is a cone, and the length of the cone is 25mm. In the ampoule On the cross-section of the growth zone passing through the central axis, the two arcs forming the cone intersect at two points with a straight line 12 mm away from the vertebral point on the central axis, and the cone angle θ formed by the tangent of the two points is 20°.

[0066] The technique of the present embodiment is according to the following steps successively:

[0067] 1. To clean the ampoules:

[0068] The cleaning process adopts a combination of comprehensive cleaning, strong hydrogen-oxygen flame baking and annealing, including:

[0069] (1) Comprehensive cleaning

...

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Abstract

The invention relates to an ampoule for growth of zinc selenide single crystals. The zinc selenide single crystal growth is completed in the ampoule in one step with zinc and selenium as raw materials and iodine as a gas phase reaction accelerator. The operation method of the ampoule comprises completely cleaning the ampoule, charging, vacuuming, sealing an ampoule growth zone, heat cleaning, allowing crystal growth, cooling and other steps in sequence. The basic structure of the used ampoule is as follows: a raw material zone is easy for mixing zinc and selenium elements, and the growth zone is a conical body formed of two tangential sections of arcs on the axial cross section of the interior of the ampoule, which is different with the traditional acute angle conical body structure directly formed of the ampoule wall. According to the technical scheme adopted by the invention, zinc selenide single crystals of a diameter 12-20mm can grow, and the grown zinc selenide single crystals have intact structure, good uniformity and low stress. The ampoule provided by the invention has the characteristics of low cost and simple process, and can also be used for preparing other II-VI group compound semiconductor single crystals.

Description

[0001] The present invention is a divisional application based on the examination opinion of the examiner. The title of the original application is "a zinc selenide single crystal growth method and its growth container". The filing date of the original application was September 1, 2008, and the application number was 2008101507709. technical field [0002] The invention relates to the field of photoelectric materials, in particular to a zinc selenide single crystal growth method and a growth container thereof. Background technique [0003] Zinc selenide (ZnSe) single crystal is a II-VI wide bandgap compound semiconductor material. Due to its excellent physical and chemical properties, it is widely used in blue light semiconductor light-emitting devices, nonlinear optoelectronic devices, nuclear radiation detection devices and near-ultraviolet-visible light detection devices. Devices have important application prospects. However, since zinc selenide has a high melting point...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/48C30B35/00
Inventor 李焕勇介万奇
Owner NORTHWESTERN POLYTECHNICAL UNIV
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