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Manufacturing method of interconnection structure

A technology of interconnection structure and fabrication method, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems affecting process stability, damage semiconductor substrates, etc., and achieve the effect of improving stability and avoiding damage

Active Publication Date: 2014-07-02
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0012] The semiconductor substrate is damaged during the manufacturing process of the existing interconnection structure, which affects the stability of the process

Method used

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  • Manufacturing method of interconnection structure
  • Manufacturing method of interconnection structure
  • Manufacturing method of interconnection structure

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Embodiment Construction

[0038] The existing method will damage the semiconductor substrate when making the interconnection structure, which affects the stability of the process. Specifically, combine Figure 3-6 , the organic protective layer 102 produced by the spin coating process or the spraying process is usually in a liquid form. In order to ensure that the organic protective layer 102 does not flow with the movement of the semiconductor substrate 100 in the subsequent process, it is necessary to carry out the liquid organic protective layer 102 Baking at a high temperature makes the organic protective layer 102 turn into a solid state. Since the organic protective layer 102 is usually in liquid form, it is composed of basic organic substances and liquid substances. After high-temperature baking, the liquid substance in the organic protective layer 102 volatilizes, while the basic organic substance remains, and the organic protective layer turns into a solid state. The temperature of the exist...

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Abstract

The embodiment of the invention provides a manufacturing method of an interconnection structure, comprising: providing a semiconductor substrate, on which is formed an interlayer dielectric layer with through-holes exposing the semiconductor substrate; forming a solid organic protection layer in the through-holes, and the thickness of the solid organic protection layer is smaller than the depth of the through-holes; etching the interlayer dielectric layer to form grooves which are communicated with the through-holes; removing the organic protection layer to expose the semiconductor substrate after the grooves are formed; and forming the interconnection structure in the grooves and the through-holes. The embodiment of the manufacturing method prevents damage to the semiconductor substrate during the process of etching the interlayer dielectric layer to form grooves, and enhances the stability of the technology.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for fabricating an interconnection structure. Background technique [0002] In the semiconductor industry, interconnect structures are used to provide wiring between devices on an IC chip and the entire package. Usually, a semiconductor device is first formed on a semiconductor substrate, and then an interconnection structure is formed on the semiconductor substrate by using a back-end process (BEOL, back-end-of-line), and the interconnection structure is used to connect the semiconductor device to the external electrical connection. The interconnection structure generally includes at least one dielectric layer, and metal interconnection lines and contact plugs are formed in the dielectric layer. [0003] Specifically, for the manufacturing method of the existing interconnection structure, please refer to Figure 1 to Figure 8 . First, please refer to figure ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768
Inventor 童立峰汪武平张春庆
Owner SEMICON MFG INT (SHANGHAI) CORP