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Polysilicon reducing furnace

A reduction furnace and polysilicon technology, applied in the direction of silicon, etc., can solve the problems of low quality, loose polysilicon rods, high energy consumption of polysilicon, etc., achieve uniform gas distribution, reduce energy consumption, and improve quality

Inactive Publication Date: 2015-04-15
SICHUAN RENESOLA SILICON MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the electrodes on the chassis of the reduction furnace in the prior art are arranged in a concentric circle structure, which is only a simple enlargement of the traditional 12-pair electrode reduction furnace. figure 1 The polysilicon rods produced by the reduction furnace shown in the figure often appear crisp and loose, and the surface of the polysilicon rods has a serious "popcorn phenomenon", and even the rods are inverted, which affects normal production.
[0006] Based on the above reasons, a new polysilicon reduction furnace is urgently needed to solve the problems of high energy consumption and low quality in the production process of polysilicon

Method used

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Embodiment 1

[0039] The polysilicon reduction furnace disclosed in this embodiment includes a furnace body and a chassis, and the structural diagram of the chassis is as follows figure 2 As shown, there are many pairs of evenly distributed electrodes 12 on the chassis 11, wherein the electrodes 12 are arranged in a honeycomb shape, specifically:

[0040] The center of the chassis 11 has six electrodes, the six electrodes 12 are arranged in a regular hexagon with the center of the chassis 11 as the center point, and the six electrodes 12 are respectively located at the six vertices of the regular hexagon place;

[0041] With the regular hexagon as the center, other electrodes are arranged outward in sequence, and the connection line of the outermost electrode 12 is approximately a circle with the center of the chassis as the center.

[0042]In other words, first make a regular hexagon with the center of the chassis as the center point, set an electrode 12 at each vertex of the regular hex...

Embodiment 2

[0049] The front view of the polysilicon reduction furnace disclosed in this embodiment is as follows: image 3 As shown, the top view of the reduction furnace chassis is still as figure 2 As shown, the silicon core arrangement of the reduction furnace is as follows Figure 4 As shown, the difference between this embodiment and the previous embodiment is that in this embodiment, combined with the overall structure of the reduction furnace, the specific dimensions of the various parts of the reduction furnace, the arrangement of silicon cores, etc. are described in detail. Still taking the reduction furnace with 36 pairs of electrodes on the chassis as an example for illustration.

[0050] see Figure 2-Figure 4 , the polysilicon reduction furnace comprises a chassis 11 and a body of furnace 21, wherein the body of furnace 21 preferably adopts a bell-type double-layer furnace body containing jacket cooling water, on the chassis 11 such as figure 2 As shown, there are 36 pa...

Embodiment 3

[0057] The arrangement of silicon cores in the polysilicon reduction furnace disclosed in this embodiment is different from that in the previous embodiment, as Figure 7-Figure 12 shown. The arrangement of the silicon cores in this embodiment is specifically as follows: taking the center of the chassis as the center of the circle, the area where the silicon cores are arranged is divided into three fan-shaped areas with an included angle of 120°, and the silicon cores in each fan-shaped area are arranged The way is symmetrical about the center of the chassis.

[0058] Among them, the above-mentioned arrangement can be divided into two categories. One is that as described in the previous embodiment, the six electrodes located at the center of the chassis are respectively connected to the electrodes of the outer layer, so that six electrodes are arranged at the center of the chassis. Silicon cores, the distribution of silicon cores in other areas depends on the number of silicon...

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Abstract

Embodiments of the invention discloses a polysilicon reducing furnace which comprises a furnace body and a chassis; the chassis is provided with several pairs of uniformly-distributed electrodes; the electrodes are arranged in a honeycomb shape; in particular, six electrodes are disposed at the center of the chassis, and are arranged in a regular hexagon with the chassis center as a center point, and the six electrodes are located at six vertexes of the regular hexagon; with the regular hexagon as a center, other electrodes are arranged outwardly, and a line connecting electrodes at an outermost layer approximately forms a circle with the chassis center being a circle center. The polysilicon reducing furnace provided by the embodiments of the invention improves the quality of polysilicon products; by increasing the pair number of the electrodes, energy consumption for producing polysilicon products per unit mass is reduced and the product quality is ensured.

Description

technical field [0001] The invention relates to polysilicon production equipment, more specifically, to a polysilicon reduction furnace. Background technique [0002] With the development of science and technology, the solar photovoltaic industry and semiconductor industry are developing more and more rapidly, so the demand for polysilicon, the main raw material used in the production of solar photovoltaic industry and semiconductor industry, is also increasing. [0003] At present, there are many methods for producing polysilicon in the industry, among which the hydrogen reduction method is more common, also known as the Siemens method. In the reaction vessel (i.e. polysilicon reduction furnace), under high temperature and high pressure environment, hydrogen reduces the reactant of silicon to form polysilicon, and the formed polysilicon will be deposited on the silicon core. As the chemical reaction continues, more and more polysilicon is deposited on the silicon core, whi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B33/03
Inventor 李仙寿吴梅
Owner SICHUAN RENESOLA SILICON MATERIAL
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