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A semiconductor power device

A technology of power devices and semiconductors, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as device on-state loss and device withstand voltage, and achieve the effects of reducing on-state loss, increasing carrier concentration, and inhibiting collection

Active Publication Date: 2016-02-03
BYD SEMICON CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention provides a novel semiconductor power device to solve the technical problem of the contradiction between device on-state loss and device withstand voltage in the prior art

Method used

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Embodiment Construction

[0015] In order to make the technical problems, technical solutions and beneficial effects solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0016] A semiconductor power device, comprising a first semiconductor layer of the first conductivity type, a second semiconductor layer of the first conductivity type located on the surface of the first semiconductor layer of the first conductivity type, a second semiconductor layer disposed in the second semiconductor layer of the first conductivity type a first well region of conductivity type, and a second well region of second conductivity type separated from the first well region of second conductivity type; type first source region, and a first conductivity type s...

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Abstract

A semiconductor power device is provided. The semiconductor power device comprises: a first semiconductor layer (204) of a first conductivity type; a first well region (2021) of a second conductivity type and a second well region (2022) of the second conductivity type; a second semiconductor layer (203) of the first conductivity type, in which a band gap of the second semiconductor layer (203) is greater than that of the first semiconductor layer (204); a first source region (2011) of the first conductivity type and a second source region (2012) of the first conductivity type; a first insulating layer (207); a polysilicon layer (209) formed on the first insulating layer (207); a second insulating layer (211); a first metal layer (208); a third semiconductor layer (206) of the second conductivity type formed below the first semiconductor layer (204); and a second metal layer (210) formed below the third semiconductor layer (206).

Description

technical field [0001] The invention belongs to the field of semiconductors, in particular to a semiconductor power device. Background technique [0002] High frequency, high withstand voltage, and low loss have always been the important performance pursuits of semiconductor power devices. Semiconductor power devices combine the advantages of bipolar and MOS power devices, and have achieved good results in terms of frequency, withstand voltage, and loss. compromise. With the continuous development of the power electronics industry, the performance requirements for semiconductor power devices are also getting higher and higher. In order to reduce the on-state voltage drop of semiconductor power devices, thereby reducing the on-state loss, a structure called a barrier layer is introduced, such as figure 1 The n-channel IGBT shown includes a barrier layer 103, a drift region 104, and well regions 102 and 112. The doping concentration of the barrier layer 103 is higher than th...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/739H01L29/06
CPCH01L29/402H01L29/7395
Inventor 肖秀光王军鹤
Owner BYD SEMICON CO LTD