Semiconductor power device

Abstract

The invention provides a semiconductor power device. The semiconductor power device comprises a first conduction type first semiconductor layer, a first conduction type second semiconductor layer, a second conduction type first well region, a second conduction type second well region, a first conduction type first source region, a first conduction type second source region, a first insulating layer, a polycrystalline silicon layer, a second insulating layer, a first metal layer, a second conduction type third semiconductor layer and a second metal layer, wherein the first conduction type second semiconductor layer is positioned on the surface of the first conduction type first semiconductor layer; the second conduction type first well region and the second conduction type second well region are arranged in the first conduction type second semiconductor layer; the first conduction type first source region and the first conduction type second source region are respectively arranged in partial regions of the second conduction type first well region and the second conduction type second well region; the first insulating layer partially covers the source regions and the well regions; the polycrystalline silicon layer is arranged on the first insulating layer; the second insulating layer covers the polycrystalline silicon layer and partial source regions; the first metal layer covers the source regions, the well regions and the second insulating layers; the second conduction type third semiconductor layer is arranged on the back surface of the first conduction type first semiconductor layer; the second metal layer is arranged on the back surface of the second conduction type third semiconductor layer; and the forbidden band width of the first conduction type second semiconductor layer is wider than that of the first conduction type first semiconductor layer. The semiconductor power device can effectively inhibit the contradiction between on-state loss and voltage endurance.

Description

technical field [0001] The invention belongs to the field of semiconductors, in particular to a semiconductor power device. Background technique [0002] High frequency, high withstand voltage, and low loss have always been the important performance pursuits of semiconductor power devices. Semiconductor power devices combine the advantages of bipolar and MOS power devices, and have achieved good results in terms of frequency, withstand voltage, and loss. compromise. With the continuous development of the power electronics industry, the performance requirements for semiconductor power devices are also getting higher and higher. In order to reduce the on-state voltage drop of semiconductor power devices, thereby reducing the on-state loss, a structure called a barrier layer is introduced, such as figure 1 The n-channel IGBT shown includes a barrier layer 103, a drift region 104, and well regions 102 and 112. The doping concentration of the barrier layer 103 is higher than th...

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Problems solved by technology

[0004] The present invention provides a novel semiconductor power device to solve the technical problem of the contradiction between device on-state loss and device withstand voltage in the prior art

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