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Solar battery and manufacturing method thereof

A solar cell and manufacturing method technology, which is applied to circuits, photovoltaic power generation, electrical components, etc., can solve the problems of affecting the electron-hole conduction efficiency, the photoelectric conversion efficiency of the solar cell 1, and the damage of the semiconductor substrate 10, etc. Absorption efficiency, avoiding the effect of poor electron-hole conduction efficiency

Inactive Publication Date: 2015-04-15
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, during the wet etching process of the semiconductor substrate 10, the semiconductor substrate 10 is often excessively damaged due to the difficulty in controlling the concentration of the acidic etching solution and the process temperature, thereby affecting the relationship between the N-type semiconductor surface 101 and the P-type semiconductor surface 102. The conduction efficiency of electrons and holes between them leads to a decrease in the photoelectric conversion efficiency of solar cells 1

Method used

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  • Solar battery and manufacturing method thereof
  • Solar battery and manufacturing method thereof
  • Solar battery and manufacturing method thereof

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Embodiment Construction

[0026] Please refer to figure 2 , which is a schematic cross-sectional view of a solar cell according to an embodiment of the present invention. Such as figure 2 As shown, the solar cell 2 described in this embodiment includes a semiconductor substrate 20 and a first anti-reflection layer 21 . The semiconductor substrate 20 has a first-type semiconductor surface 201 and a second-type semiconductor surface 202 opposite to each other. The first anti-reflection layer 21 includes a plurality of refraction bumps 211 and a cover layer 212 . These refraction bumps 211 are disposed on the second-type semiconductor surface 202 , wherein each refraction bump 211 has a first refraction portion 2111 and a second refraction portion 2112 . The second refraction portion 2112 conformally covers the first refraction portion 2111 , and the refraction index of the first refraction portion 2111 is greater than that of the second refraction portion 2112 . The cover layer 212 covers the secon...

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Abstract

A solar cell includes a semiconductor substrate and a first antireflective layer. The semiconductor substrate has a first-type semiconductor surface and a second-type semiconductor surface opposite to each other. The first antireflective layer includes a plurality of refraction convexes and a coverage layer. The refraction convexes are formed on the second-type semiconductor surface. Each refraction convex includes a first refraction part and a second refraction part. The first refraction parts are conformally coated with the respective second refraction parts, and the first refraction part is configured to have a refractive index greater than the refractive index of the second refraction part. The coverage layer is formed to cover the second-type semiconductor surface and the refraction convexes, and the coverage layer is configured to have a refractive index smaller than the refractive index of the second refraction part. A solar cell manufacturing method is also provided.

Description

technical field [0001] The invention relates to a solar cell and its manufacturing method, and in particular to a solar cell with a microstructure anti-reflection layer and its manufacturing method. Background technique [0002] Please refer to figure 1 , which is a schematic cross-sectional view of a known solar cell. Such as figure 1 As shown, a known solar cell 1 includes a semiconductor substrate 10 , a first antireflection layer 11 , a second antireflection layer 12 , a first electrode 13 and a second electrode 14 . The semiconductor substrate 10 has an N-type semiconductor surface 101 and a P-type semiconductor surface 102 opposite to each other. The first anti-reflection layer 11 is disposed on the N-type semiconductor surface 101 , and the second anti-reflection layer 12 is disposed on the P-type semiconductor surface 102 . The first electrode 13 and the second electrode 14 are respectively in contact with the N-type semiconductor surface 101 and the P-type semic...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0216H01L31/18
CPCH01L31/02168Y02E10/50
Inventor 胡雁程何伟硕陈人杰吴振诚
Owner AU OPTRONICS CORP