Ldmos device with stepped multiple discontinuous field plates and manufacturing method
A stepped, field plate technology, used in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problem of single distance between the field plate and the device surface, and achieve the effect of increasing doping concentration and improving on-resistance
Active Publication Date: 2016-03-30
INNOGRATION SUZHOU
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However, the commonly used single field plate technology has great limitations, because the distance between the horizontal part of the field plate and the semiconductor surface is constant, such as figure 1 shown, but the ideal field plate requires that the distance between the field plate and the device surface should not be a single
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[0031] The structure of the LDMOS device with stepped multiple discontinuous field plates described in this embodiment is as follows figure 2 As shown, it includes a semiconductor body 1, the semiconductor body 1 includes a lowermost P-type heavily doped substrate 12, a P-type epitaxial layer 13 on the P-type heavily doped substrate 12, and an uppermost semiconductor dielectric layer 3 A P-type heavily doped source region 15, a P-type doped channel region 16, an N-type doped drain drift region 11 and an N-type heavily doped drain region 18 are formed between the P-type epitaxial layer 13 and the semiconductor dielectric layer 3 , where the P-type heavily doped source region 15 and the P-type doped channel region 16 are connected to form an N-type heavily doped source region 17 . Between the P-type heavily doped source region 15 and the P-type heavily doped substrate, a P-type doped connection or a trench 14 filled with a conductor is arranged, and the P-type doping in the tre...
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An LDMOS device with stepped multiple discontinuous field plates and a manufacturing method. The LDMS device comprises a semiconductor body. The semiconductor body comprises a semiconductor substrate region, a semiconductor epitaxial layer and a semiconductor medium layer that are sequentially arranged from bottom to top. A gate extending along a channel region, and at least two field plates sequentially arranged in a horizontal direction from the gate to a drain drift region are arranged in the semiconductor medium layer. A first field plate adjacent to the gate horizontally extends in the drain drift region, and other field plates not adjacent to the gate are horizontal strip-shaped. The distance between every two field plates is greater than zero. A distance between a second field plate adjacent to the first field plate and the drain drift region is greater than a distance between a horizontally-extending part of the first field plate and the drain drift region; other horizontal strip-shaped field plates have incremental distances to the drain drift region. The present invention resolves the contradiction between a source-drain breakdown voltage and an optimization requirement of a turn-on resistor, and improves the performance of the LDMS device.
Description
technical field [0001] The invention relates to an LDMOS device with stepped multiple discontinuous field plates and a corresponding processing method thereof. Background technique [0002] In power LDMOS devices, it is required to reduce the source-drain on-resistance Rds of the device as low as possible on the premise of satisfying the source-drain breakdown voltage BVdss. The existing technology improves the working efficiency of the device by reducing the power consumption of the device. However, the optimization requirements of source-drain breakdown voltage and on-resistance are contradictory. In radio frequency LDMOS power devices, field plate technology is often used to alleviate this contradiction. However, the commonly used single field plate technology has great limitations, because the distance between the horizontal part of the field plate and the semiconductor surface is constant, such as figure 1 As shown, but the ideal field plate requires that the distance ...
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IPC IPC(8): H01L29/78H01L29/40H01L21/336
CPCH01L29/7835H01L29/404H01L29/4175H01L29/66659
Inventor 马强
Owner INNOGRATION SUZHOU