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Method for adjusting out-of-band cut-off width of bandpass filter with multicavity structure

A technology of band-pass filter and adjustment method, applied in the direction of filter, etc., can solve the problem of insufficient cut-off width, etc., and achieve the effect of simple film system and excellent spectral characteristic curve.

Active Publication Date: 2012-11-28
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The second method is easier to produce a bandpass filter with a better waveform, but there are some problems with this method, such as the problem of insufficient cut-off width
Plating the front cut-off film on one side of the substrate can usually meet the cut-off width requirements of the user in the short-wave direction; while on the other side of the substrate, relying on the band-pass film system to meet the cut-off width requirements of the long-wave direction, sometimes encounter to difficulty

Method used

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  • Method for adjusting out-of-band cut-off width of bandpass filter with multicavity structure
  • Method for adjusting out-of-band cut-off width of bandpass filter with multicavity structure
  • Method for adjusting out-of-band cut-off width of bandpass filter with multicavity structure

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Embodiment Construction

[0023] The specific implementation manner of the present invention will be described below according to examples.

[0024] Taking the design of 3.5~4.0μm infrared bandpass filter as an example, the method of widening the cut-off width in the long-wave direction is demonstrated.

[0025] (1) Select germanium (Ge) as the high refractive index material, silicon monoxide (SiO) as the low refractive index material, adopt 4 half-wave film systems L 2H LHL 2H LHL 2H LHL 2H, the reference wavelength is 3.74μm, and the designed The initial film structure basically meets the requirements of bandwidth width, central wavelength position, and passband edge steepness, and its spectral curve is as follows: figure 2 shown. In the actual application process, the user hopes that the signal with a wavelength of 6 μm can be completely cut off, so it is necessary to further widen the cutoff width on the long wavelength side.

[0026] (2) Using the method of the present invention to widen the cu...

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Abstract

The invention discloses a method for adjusting the out-of-band cut-off width of a bandpass filter with a multicavity structure. According to the method, the cut-off width of the filter is adjusted by changing the thickness of a membrane layer M made of a material which is the same as that of a spacer layer by adjusting reflection layers in a plurality of Fabry-Boron bandpass membrane systems forming the bandpass filter with the multicavity structure. During actual application, the filter generally needs a relatively big cut-off width; the cut-off width of the bandpass filter in a long wave direction can be increased by increasing the thickness of the M; the increased value of the thickness of the M is required to be less than 0.5 time of the thickness of the original membrane layer; and through adjustment, the cut-off width of the bandpass filter with the multicavity structure in the long wave direction can be increased by over 9 percent. The method has the advantages that the membrane systems of the filter are relatively simple, and a spectral characteristic curve is good, the structure of the whole membrane system is not required to be changed because of slight error of the cut-off width, and the number of membrane layers is not required to be additionally increased.

Description

technical field [0001] The invention relates to optical thin film technology, in particular to a method for adjusting the out-of-band cut-off width of a band-pass filter with a multi-cavity structure. Background technique [0002] Bandpass filters are widely used in the fields of remote sensing, spectroscopy and optoelectronics. There are usually two methods to form a bandpass filter: the first is to coat both sides of the substrate with long-pass and short-pass cut-off films; the second is to coat both sides of the substrate with multiple Fabry-Perot films. Band-pass film system and cut-off film system of the resonator. The second method is easier to produce a band-pass filter with a better waveform, but there are some problems with this method, such as the problem of insufficient cut-off width. Plating the front cut-off film on one side of the substrate can usually meet the cut-off width requirements of the user in the short-wave direction; while on the other side of the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B5/20
Inventor 蔡渊刘定权
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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